发明授权
- 专利标题: Semiconductor sensor method
- 专利标题(中): 半导体传感器方法
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申请号: US401044申请日: 1995-03-08
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公开(公告)号: US5587343A公开(公告)日: 1996-12-24
- 发明人: Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
- 申请人: Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
- 申请人地址: JPX Kariya
- 专利权人: Nippondenso Co., Ltd.
- 当前专利权人: Nippondenso Co., Ltd.
- 当前专利权人地址: JPX Kariya
- 优先权: JPX6-038836 19940309; JPX7-031163 19950220
- 主分类号: G01L1/18
- IPC分类号: G01L1/18 ; G01L1/22 ; G01P15/08 ; G01P15/12 ; H01L21/28 ; H01L29/51 ; H01L29/84 ; H01L21/00 ; B44C1/22
摘要:
A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.
公开/授权文献
- US4475935A Joining method to obtain elongated coated optical fiber 公开/授权日:1984-10-09