发明授权
- 专利标题： Semiconductor device and a method for producing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US338195申请日： 1994-11-09
-
公开(公告)号： US5594259A公开(公告)日： 1997-01-14
- 发明人: Yasunori Shimada , Masahito Goto , Hisashi Saito , Koji Taniguchi
- 申请人： Yasunori Shimada , Masahito Goto , Hisashi Saito , Koji Taniguchi
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX3-219031 19910829
- 主分类号： G02F1/1343
- IPC分类号： G02F1/1343 ; G02F1/136 ; G02F1/1368 ; H01L21/28 ; H01L21/3205 ; H01L21/336 ; H01L23/52 ; H01L29/49 ; H01L29/78 ; H01L29/786 ; H01L29/76
摘要：
A semiconductor device includes an insulating substrate; and an electrode wiring provided on an area of the insulating substrate. The electrode wiring is formed of a material selected from the group consisting of an alloy of Ta and Nb, Nb, and a metal mainly including Nb. A method for producing a semiconductor device includes the steps of forming a layer including Nb doped with nitrogen on an insulating substrate by a sputtering method in an atmosphere of an inert gas including nitrogen, and then patterning the layer to form an electrode wiring on an area of the insulating substrate; and forming an oxide film at a portion of the electrode wiring by anodization, the portion including at least a surface thereof.
公开/授权文献
- US4921126A Liquid supply system utilizing stacked tanks 公开/授权日：1990-05-01