发明授权
- 专利标题: Threshold voltage measuring device for memory cells
- 专利标题(中): 用于存储单元的阈值电压测量装置
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申请号: US412326申请日: 1995-03-31
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公开(公告)号: US5600594A公开(公告)日: 1997-02-04
- 发明人: Silvia Padoan , Marco Maccarrone , Marco Olivo
- 申请人: Silvia Padoan , Marco Maccarrone , Marco Olivo
- 申请人地址: ITX Agrate Brianza
- 专利权人: SGS-Thomson Microelectronics S.r.l.
- 当前专利权人: SGS-Thomson Microelectronics S.r.l.
- 当前专利权人地址: ITX Agrate Brianza
- 优先权: EPX94830156 19940331
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C29/00 ; G11C29/50 ; G11C29/56 ; G11C16/02
摘要:
A circuit device for measuring the threshold voltage distribution among electrically programmable, non-volatile memory cells, which device comprises a differential amplifier having a first input connected to a first circuit leg including at least one memory cell and a second input connected to a second or reference circuit leg, and circuit means effective to cause an unbalance in the values of the currents flowing in the reference leg. The device is connected between a first supply voltage reference and a second voltage reference, and said circuit means comprise a generator of a varying current as a function of the supply voltage which is associated with the reference leg.
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