发明授权
US5605609A Method for forming low refractive index film comprising silicon dioxide
失效
用于形成包含二氧化硅的低折射率膜的方法
- 专利标题： Method for forming low refractive index film comprising silicon dioxide
- 专利标题（中）： 用于形成包含二氧化硅的低折射率膜的方法
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申请号： US323579申请日： 1994-10-17
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公开(公告)号： US5605609A公开(公告)日： 1997-02-25
- 发明人: Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
- 申请人： Eiichi Ando , Akira Mitsui , Junichi Ebisawa , Koichi Suzuki , Kiyoshi Matsumoto , Takuji Oyama
- 申请人地址： JPX Tokyo
- 专利权人： Asahi Glass Company Ltd.
- 当前专利权人： Asahi Glass Company Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-48765 19880303; JPX63-76202 19880331; JPX63-144827 19880614; JPX63-264163 19881021; JPX1-197993 19890801; JPX1-224484 19890901; JPX2-161413 19900621
- 主分类号： B32B17/10
- IPC分类号： B32B17/10 ; B32B27/06 ; C03C17/23 ; C03C17/245 ; C03C17/25 ; C03C17/34 ; C03C17/36 ; C03C17/38 ; C03C17/42 ; C23C14/08 ; C23C14/10 ; C23C14/34 ; G02B1/10 ; G02B1/11 ; G02F1/1333 ; G02F1/1335 ; H01J37/34
摘要：
The present invention relates to a film comprising silicon dioxide as the main component, which contains Zr, etc., and a method for forming it by reactive DC sputtering. It makes it possible to form reflection preventive films, alkali barrier films and various multi-layered films such as multi-layered films for anti-iridescent glass, which contain said film comprising silicon dioxide as the main component, by a physical vapor deposition method without breaking a vacuum.
公开/授权文献
- US4502936A Electrode and electrolytic cell 公开/授权日：1985-03-05
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