发明授权
- 专利标题： Contact plug forming method
- 专利标题（中）： 接触塞形成方法
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申请号： US526543申请日： 1995-09-12
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公开(公告)号： US5607878A公开(公告)日： 1997-03-04
- 发明人: Mari Otsuka , Tomonori Kitakura , Kenichi Otsuka , Kazuya Mori
- 申请人： Mari Otsuka , Tomonori Kitakura , Kenichi Otsuka , Kazuya Mori
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-280619 19931014
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/28
摘要：
An inter-level insulation film is formed on a first-level interconnection layer and part of the inter-level insulation film which lies on the first-level interconnection layer is etched to form a contact hole. After a natural oxidation film formed on the surface of part of the first-level interconnection layer which is exposed in the contact hole is removed, the resultant structure is exposed to a gas atmosphere containing halogen to purify the surface of the inter-level insulation film. After this, a contact plug is deposited and formed on the first-level interconnection layer which is exposed in the contact hole by the selective CVD method to fill in the contact hole. A second-level interconnection layer is formed on the inter-level insulation film and the first-level and second-level interconnection layers are electrically connected to each other via the contact plug.
公开/授权文献
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