公开(公告)号：US5607878A

公开(公告)日：1997-03-04

申请号：US526543

申请日：1995-09-12

申请人： Mari Otsuka ,  Tomonori Kitakura ,  Kenichi Otsuka ,  Kazuya Mori

发明人： Mari Otsuka ,  Tomonori Kitakura ,  Kenichi Otsuka ,  Kazuya Mori

IPC分类号： H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76879 ,  Y10S148/017

摘要： An inter-level insulation film is formed on a first-level interconnection layer and part of the inter-level insulation film which lies on the first-level interconnection layer is etched to form a contact hole. After a natural oxidation film formed on the surface of part of the first-level interconnection layer which is exposed in the contact hole is removed, the resultant structure is exposed to a gas atmosphere containing halogen to purify the surface of the inter-level insulation film. After this, a contact plug is deposited and formed on the first-level interconnection layer which is exposed in the contact hole by the selective CVD method to fill in the contact hole. A second-level interconnection layer is formed on the inter-level insulation film and the first-level and second-level interconnection layers are electrically connected to each other via the contact plug.

摘要翻译： 层间绝缘膜形成在一级互连层上，并且位于第一级互连层上的层间绝缘膜的一部分被蚀刻以形成接触孔。 在形成在暴露在接触孔中的一级互连层的部分表面上的自然氧化膜被除去之后，将所得结构暴露于含有卤素的气氛中，以净化层间绝缘膜的表面 。 之后，在通过选择性CVD法在接触孔中露出的第一层互连层上沉积并形成接触插塞以填充接触孔。 第二级互连层形成在层间绝缘膜上，并且第一级和第二级互连层经由接触插塞彼此电连接。

公开(公告)号：US5834367A

公开(公告)日：1998-11-10

申请号：US629944

申请日：1996-04-12

申请人： Mari Otsuka ,  Kenichi Otsuka

发明人： Mari Otsuka ,  Kenichi Otsuka

IPC分类号： H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L21/283

CPC分类号： H01L23/5226 ,  H01L21/76838 ,  H01L21/76879 ,  H01L23/485 ,  H01L2924/0002

摘要： In a method of manufacturing a semiconductor device having a multilayer wiring structure, it has at least two underlying layers having different etching conditions. Firstly, the native oxide film formed on one of the underlying layers, or a barrier metal layer, is etched out under etching conditions suitable for the barrier metal layer. Then, the surface of the barrier metal layer is capped with a plugging material having etching conditions similar to or substantially the same as those of the other one of the underlying layers, or a lower wiring layer. Subsequently, the native oxide film and the etching by-product formed on the lower wiring layer are etched out under etching conditions suitable for the lower wiring layer. Thereafter, contact holes for the two underlying layers are buried with a conductive substance to establish electric connection with their respective upper conductive layers. With the above described steps, the entire manufacturing process is significantly simplified and the time required for burying the contact holes is greatly reduced without remarkably increasing the contact resistance between the barrier metal layer and the lower wiring layer and the respective buried conductive substances.

摘要翻译： 在制造具有多层布线结构的半导体器件的方法中，它具有至少两个具有不同蚀刻条件的下层。 首先，在适合于阻挡金属层的蚀刻条件下，蚀刻形成在其中一层或阻挡金属层上的自然氧化膜。 然后，用具有与另一个下层或下布线层类似或基本相同的蚀刻条件的封堵材料封盖阻挡金属层的表面。 随后，在适合于下布线层的蚀刻条件下，蚀刻在下布线层上形成的自然氧化膜和蚀刻副产物。 此后，用导电物质掩埋两个下层的接触孔，以与它们各自的上导电层建立电连接。 通过上述步骤，整个制造过程被显着简化，并且大大降低了掩埋接触孔所需的时间，而不显着增加阻挡金属层与下部布线层之间的接触电阻以及相应的掩埋导电物质。

公开(公告)号：US06180513B2

公开(公告)日：2001-01-30

申请号：US08910007

申请日：1997-08-12

申请人： Mari Otsuka ,  Kenichi Otsuka

发明人： Mari Otsuka ,  Kenichi Otsuka

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76879

摘要： Disclosed are an apparatus and a method for manufacturing a semiconductor device. A Si wafer set within an L/UL chamber is transferred under the state of a high vacuum through a transfer chamber into a Ti chamber. The wafer is heated to at least 300° C. within the Ti chamber by a heating mechanism arranged within the Ti chamber. Then, a TiSix film is formed at a bottom portion of a contact hole by a plasma CVD method using an Ar gas supplied through a gas line as a carrier gas and a TiCl4 gas supplied through another gas line as a source gas, Ti in the source gas being self-aligned with Si in the wafer. The wafer having the TiSix film formed therein is transferred through the transfer chamber into a W chamber without being exposed to the air atmosphere. Within the W chamber, a W film is consecutively deposited by a selective CVD method on the TiSix film. The particular technique makes it possible to form the TiSix film of a high quality at a bottom portion of the contact hole even if the contact hole has a large aspect ratio.

摘要翻译： 公开了一种用于制造半导体器件的装置和方法。 L / UL室内的Si晶片在高真空状态下通过转移室转移到Ti室中。 通过设置在Ti室内的加热机构将晶片加热至Ti室内至少300℃。 然后，通过等离子体CVD法，使用通过气体管线作为载气供给的Ar气体和通过另一气体管线作为源气体供给的TiCl 4气体，在接触孔的底部形成TiSix膜，Ti 源气体与晶片中的Si自对准。 其中形成有TiSix膜的晶片通过传送室转移到W室中而不暴露于空气气氛。 在W室内，通过选择性CVD法在TiSix膜上连续沉积W膜。 特别的技术使得即使接触孔具有大的纵横比，也可以在接触孔的底部形成高品质的TiSix膜。

公开(公告)号：US5496393A

公开(公告)日：1996-03-05

申请号：US441114

申请日：1995-05-15

申请人： Kenichi Otsuka ,  Kazuya Mori

发明人： Kenichi Otsuka ,  Kazuya Mori

IPC分类号： B01D46/46 ,  B01D53/04 ,  B01D53/047

CPC分类号： B01D53/047 ,  B01D46/46 ,  B01D2256/18 ,  B01D2259/40003 ,  B01D2259/40009 ,  B01D2259/402 ,  B01D53/0446

摘要： A gas purification apparatus has two gas purification units which are alternately operated. A gas purification capacity measuring means includes a means including valves for separating a target gas purification unit from a line, an evacuating means for evacuating the separated gas purification unit at a high vacuum, a means including a supply tank for supplying a predetermined very small amount of an impurity gas to an inlet of the high-vacuum separated gas purification unit, an auxiliary tank (e.g., a pressure reduction tank, a metering tank, and a pressure reduction valve), and a vacuum gauge for measuring a change in pressure at the outlet upon supply of the impurity gas to the inlet. In the gas purification apparatus having gas purification units each incorporating a getter material, the gas purification capacity of each gas purification unit can be more accurately and easily measured.

摘要翻译： 气体净化装置具有交替操作的两个气体净化单元。 气体净化能力测量装置包括一个装置，它包括用于从一条管线上分离一个目标气体净化单元的阀门，一个用于在高真空下排空分离的气体净化单元的排气装置，一个装置，该装置包括供给罐，用于提供预定的极少量 的杂质气体输送到高真空分离气体净化单元的入口，辅助箱（例如减压箱，计量罐和减压阀）和用于测量压力变化的真空计 在向入口供应杂质气体时的出口。 在具有各自含有吸气剂材料的气体净化单元的气体净化装置中，能够更准确，容易地测量各气体净化单元的气体净化能力。

公开(公告)号：US5498571A

公开(公告)日：1996-03-12

申请号：US457484

申请日：1995-06-01

申请人： Kazuya Mori ,  Kenichi Otsuka

发明人： Kazuya Mori ,  Kenichi Otsuka

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283

CPC分类号： H01L21/76819 ,  H01L21/76838 ,  H01L21/76885 ,  Y10S438/937

摘要： An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first interconnection layer consisting of the Al alloy interconnection layer and the first carbon layer. Sequentially, a second carbon layer is formed on the first interconnection layer and the silicon oxide layer. The second carbon layer is entirely etched by the RIE method, thereby leaving the second carbon layer only on side surfaces of the first interconnection layer. A high temperature layer made of SiO.sub.2 is deposited on the second carbon layer, the first interconnection layer and the silicon oxide layer. Thereafter, the high temperature layer is etched back until the first carbon layer is exposed, thus being flattened. An interlayer insulating layer is deposited on the high temperature layer and the first interconnection layer.

摘要翻译： 在氧化硅层上沉积Al合金配线层，在Al合金配线层上形成第一碳层。 然后，对第一碳层和Al合金配线层进行构图，形成由Al合金配线层和第一碳层构成的第一配线层。 接下来，在第一互连层和氧化硅层上形成第二碳层。 通过RIE方法完全蚀刻第二碳层，从而仅在第一互连层的侧表面上留下第二碳层。 由SiO 2制成的高温层沉积在第二碳层，第一互连层和氧化硅层上。 此后，将高温层回蚀刻直到第一碳层露出，从而变平。 在高温层和第一互连层上沉积层间绝缘层。

公开(公告)号：US5759912A

公开(公告)日：1998-06-02

申请号：US653904

申请日：1996-05-28

申请人： Kazuya Mori ,  Kenichi Otsuka

发明人： Kazuya Mori ,  Kenichi Otsuka

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76819 ,  H01L21/76838 ,  H01L21/76885 ,  Y10S438/937

摘要： An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first interconnection layer consisting of the Al alloy interconnection layer and the first carbon layer. Sequentially, a second carbon layer is formed on the first interconnection layer and the silicon oxide layer. The second carbon layer is entirely etched by the RIE method, thereby leaving the second carbon layer only on side surfaces of the first interconnection layer. A high temperature layer made of SiO.sub.2 is deposited on the second carbon layer, the first interconnection layer and the silicon oxide layer. Thereafter, the high temperature layer is etched back until the first carbon layer is exposed, thus being flattened. An interlayer insulating layer is deposited on the high temperature layer and the first interconnection layer.

摘要翻译： 在氧化硅层上沉积Al合金配线层，在Al合金配线层上形成第一碳层。 然后，对第一碳层和Al合金配线层进行构图，形成由Al合金配线层和第一碳层构成的第一配线层。 接下来，在第一互连层和氧化硅层上形成第二碳层。 通过RIE方法完全蚀刻第二碳层，从而仅在第一互连层的侧表面上留下第二碳层。 由SiO 2制成的高温层沉积在第二碳层，第一互连层和氧化硅层上。 此后，将高温层回蚀刻直到第一碳层露出，从而变平。 在高温层和第一互连层上沉积层间绝缘层。

公开(公告)号：US07017507B2

公开(公告)日：2006-03-28

申请号：US10902733

申请日：2004-07-29

申请人： Toshiyuki Hattori ,  Kenichi Otsuka

发明人： Toshiyuki Hattori ,  Kenichi Otsuka

IPC分类号： B63H25/10

CPC分类号： B63H25/02 ,  B63B35/731 ,  B63H2025/024

摘要： A watercraft can include seats having hip supports for the riders including an operator and/or passengers thereof. Additionally, the watercraft can include a handlebar cover that is configured to prevent water from entering a steering mechanism. For example, the handlebar cover can include a lower portion and an upper portion extending downwardly over the lower portion.

摘要翻译： 船舶可以包括具有臀部支撑的座椅，其包括操作者和/或其乘客。 另外，船舶可以包括构造成防止水进入转向机构的把手盖。 例如，把手盖可以包括下部和在下部向下延伸的上部。

公开(公告)号：US08222649B2

公开(公告)日：2012-07-17

申请号：US12161592

申请日：2006-11-17

申请人： Naruhisa Miura ,  Keiko Fujihira ,  Kenichi Otsuka ,  Masayuki Imaizumi

发明人： Naruhisa Miura ,  Keiko Fujihira ,  Kenichi Otsuka ,  Masayuki Imaizumi

IPC分类号： H01L29/161 ,  H01L29/167 ,  H01L21/36

CPC分类号： H01L29/0661 ,  H01L29/0615 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/7811

摘要： A semiconductor device and a method of manufacturing the same, to appropriately determine an impurity concentration distribution of a field relieving region and reduce an ON-resistance. The semiconductor device includes a substrate, a first drift layer, a second drift layer, a first well region, a second well region, a current control region, and a field relieving region. The first well region is disposed continuously from an end portion adjacent to the vicinity of outer peripheral portion of the second drift layer to a portion of the first drift layer below the vicinity of outer peripheral portion. The field relieving region is so disposed in the first drift layer as to be adjacent to the first well region.

摘要翻译： 一种半导体器件及其制造方法，用于适当地确定场释放区域的杂质浓度分布并降低导通电阻。 半导体器件包括衬底，第一漂移层，第二漂移层，第一阱区，第二阱区，电流控制区和场释放区。 第一阱区从与第二漂移层的外周部附近相邻的端部连续配置到第一漂移层的位于外周部附近的部分。 场解除区域被布置在第一漂移层中以与第一阱区域相邻。

公开(公告)号：US08037781B2

公开(公告)日：2011-10-18

申请号：US12178081

申请日：2008-07-23

申请人： Michael Augustin Curtin ,  Kenichi Otsuka

发明人： Michael Augustin Curtin ,  Kenichi Otsuka

IPC分类号： B62D1/18 ,  B63H25/04

CPC分类号： B63H25/02 ,  B62K21/16 ,  B63H2025/024 ,  Y10T74/20792

摘要： A steering system for a water vehicle includes a housing having a substantially cylindrical member, at least one case member extending through the substantially cylindrical member, a column shaft extending through the pair of case members, including at least one elongated hole disposed on opposed side of the column shaft, and being arranged to move relative to the pair of case members and the housing in an axial direction of the column shaft, and a telescoping mechanism partially disposed in the column shaft. One of the pair of case members includes a plurality of detents provided on an inner surface thereof. The telescoping mechanism includes at least one elongated hole disposed at one end portion of the telescoping mechanism, a locking pin extending through the at least one elongated hole in the telescoping mechanism and the at least one elongated hole in the column shaft, and a lever disposed at an opposite end portion from the one end portion of the telescoping mechanism. The lever is movable to move the locking pin into and out of engagement with respective ones of the plurality of detents to enable the column shaft to be selectively moved relative to the pair of case members and the housing and fixed at a desired location relative to the pair of case members and the housing.

摘要翻译： 一种用于水车辆的转向系统包括具有基本圆柱形构件的壳体，延伸穿过基本圆柱形构件的至少一个壳体构件，延伸穿过该对壳体构件的柱轴，包括至少一个细长孔， 柱轴，并且被布置成沿柱轴的轴向相对于一对壳体构件和壳体移动，以及部分地设置在柱轴中的伸缩机构。 一对壳体构件中的一个包括设置在其内表面上的多个棘爪。 伸缩机构包括设置在伸缩机构的一个端部处的至少一个细长孔，延伸穿过伸缩机构中的至少一个细长孔和柱轴中的至少一个细长孔的锁定销， 在与伸缩机构的一个端部相对的端部处。 杠杆是可移动的，以将锁定销移动进入和脱离与多个棘爪中的相应的止动器的接合，以使得柱轴能够相对于一对壳体构件和壳体选择性地移动并固定在相对于 一对案件成员和房屋。

公开(公告)号：US4810285A

公开(公告)日：1989-03-07

申请号：US170349

申请日：1988-03-18

申请人： Kenichi Otsuka ,  Minoru Nitta

发明人： Kenichi Otsuka ,  Minoru Nitta

IPC分类号： B22F9/28 ,  H01B1/02 ,  B22F9/12

CPC分类号： B22F9/28 ,  H01B1/02 ,  Y10S75/953

摘要： In a process for preparing a spherical copper fine powder having an average grain size ranging from 0.1 .mu.m to a few .mu.m, by use of chemical vapor deposition of cuprous chloride vapor with a reducing gas, the vapor deposition zone is maintained at a temperature ranging 900.degree. C. to less than 1,150.degree. C. and the generated particles are quenched subsequently. The generated powder is utilized as a conductive powder which is the main component of a conductive paste.

摘要翻译： 在制备平均粒径为0.1μm至几μm的球形铜细粉末的方法中，通过使用还原气体的化学气相沉积氯化亚铜蒸汽，蒸气区保持在温度 900℃至小于1150℃，随后产生的颗粒骤冷。 所产生的粉末用作导电浆料的主要成分的导电粉末。