发明授权
- 专利标题： Method of manufacturing a perovskite thin film dielectric
- 专利标题（中）： 钙钛矿薄膜电介质的制造方法
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申请号： US526387申请日： 1995-09-11
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公开(公告)号： US5618761A公开(公告)日： 1997-04-08
- 发明人: Kazuhiro Eguchi , Masahiro Kiyotoshi , Keitaro Imai
- 申请人： Kazuhiro Eguchi , Masahiro Kiyotoshi , Keitaro Imai
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-221446 19940916; JPX7-050104 19950309
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L21/8242 ; H01L27/108
摘要：
Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, the dielectric thin film being made of a compound represented by the general formula (1) given below:ABO.sub.3 (1)where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,The dielectric thin film being formed by a chemical vapor deposition under a pressure of 400 Torr or less and a temperature of 1,000.degree. C. or less by using a raw material gas containing a complex compound of element A with a .beta.-diketone, a complex compound of element B with a .beta.-diketone, and an oxidizing agent.