发明授权
- 专利标题： Method of fabricating thin film semiconductor integrated circuit
- 专利标题（中）： 制造薄膜半导体集成电路的方法
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申请号： US413104申请日： 1995-03-29
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公开(公告)号： US5620905A公开(公告)日： 1997-04-15
- 发明人: Toshimitsu Konuma , Masaaki Hiroki , Hongyong Zhang , Mutsuo Yamamoto , Yasuhiko Takemura
- 申请人： Toshimitsu Konuma , Masaaki Hiroki , Hongyong Zhang , Mutsuo Yamamoto , Yasuhiko Takemura
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX5-285990 19931020
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; G02F1/1368 ; H01L21/20 ; H01L21/28 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/78 ; H01L29/786
摘要：
In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs are electrically insulated each other, voltages are applied independently to gate electrodes in an electrolytic solution during an anodization, to form an anodic oxide in at least both sides of each gate electrode. A thickness of the anodic oxide is changed in accordance with characteristics of the TFT. A width of high resistance regions formed in an active layer of each TFT is changed by ion doping using the anodic oxide having a desired thickness as a mask.
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