公开(公告)号：US07897972B2

公开(公告)日：2011-03-01

申请号：US12476445

申请日：2009-06-02

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US07045399B2

公开(公告)日：2006-05-16

申请号：US10620420

申请日：2003-07-17

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L29/80 ,  H01L33/00

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

公开(公告)号：US06743667B2

公开(公告)日：2004-06-01

申请号：US09773620

申请日：2001-02-02

申请人： Masamitsu Hiroki ,  Yasuhiko Takemura ,  Mutsuo Yamamoto ,  Naoaki Yamaguchi ,  Satoshi Teramoto

发明人： Masamitsu Hiroki ,  Yasuhiko Takemura ,  Mutsuo Yamamoto ,  Naoaki Yamaguchi ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L29/78621

摘要： An amorphous semiconductor film comprising silicon is provided with a metal element which is capable of promoting a crystallization of silicon. Then, the semiconductor film is crystallized by hating at a relatively low temperature. After introducing impurity ions into source and drain regions of the semiconductor film, the source and drain regions are recrystallized by heating. During the recrystallization, the channel region having crystallinity functions as crystalline nuclei. Accordingly, it is possible to avoid defects occurring in the boundary regions between the channel region and source/drain regions.

摘要翻译： 包含硅的非晶半导体膜具有能够促进硅结晶的金属元素。 然后，半导体膜在相对较低的温度下憎恨而结晶。 在将杂质离子引入半导体膜的源极和漏极区域之后，通过加热使源极和漏极区域再结晶。 在重结晶期间，具有结晶性的沟道区域作为结晶核发挥作用。 因此，可以避免在沟道区域和源极/漏极区域之间的边界区域中发生的缺陷。

公开(公告)号：US07547916B2

公开(公告)日：2009-06-16

申请号：US11447955

申请日：2006-06-07

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L29/76

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US20050145847A1

公开(公告)日：2005-07-07

申请号：US11022882

申请日：2004-12-28

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/28 ,  C23C14/34 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/26 ,  H01L29/74

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US06608353B2

公开(公告)日：2003-08-19

申请号：US10193162

申请日：2002-07-12

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L2701

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US06448612B1

公开(公告)日：2002-09-10

申请号：US09703594

申请日：2000-11-02

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L2701

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 在第一层的顶部上形成由铝组成的第二层。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US5623157A

公开(公告)日：1997-04-22

申请号：US483049

申请日：1995-06-07

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L21/28 ,  C23C14/34 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/70 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/26 ,  H01L29/76 ,  H01L27/01 ,  H01L29/94

CPC分类号： H01L23/53223 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  G02F1/1368 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 在第一层的顶部上形成由铝组成的第二层。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。

公开(公告)号：US5620905A

公开(公告)日：1997-04-15

申请号：US413104

申请日：1995-03-29

申请人： Toshimitsu Konuma ,  Masaaki Hiroki ,  Hongyong Zhang ,  Mutsuo Yamamoto ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Masaaki Hiroki ,  Hongyong Zhang ,  Mutsuo Yamamoto ,  Yasuhiko Takemura

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/2026 ,  H01L21/28079 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  Y10S438/981

摘要： In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs are electrically insulated each other, voltages are applied independently to gate electrodes in an electrolytic solution during an anodization, to form an anodic oxide in at least both sides of each gate electrode. A thickness of the anodic oxide is changed in accordance with characteristics of the TFT. A width of high resistance regions formed in an active layer of each TFT is changed by ion doping using the anodic oxide having a desired thickness as a mask.

摘要翻译： 在半导体集成电路中，在具有绝缘面的同一基板上形成多个薄膜晶体管（TFT）。 由于形成在TFT中的栅电极彼此电绝缘，所以在阳极氧化期间，在电解液中的栅电极独立地施加电压，以在每个栅电极的至少两侧形成阳极氧化物。 阳极氧化物的厚度根据TFT的特性而改变。 通过使用具有所需厚度的阳极氧化物作为掩模的离子掺杂来改变形成在每个TFT的有源层中的高电阻区域的宽度。

公开(公告)号：US08294152B2

公开(公告)日：2012-10-23

申请号：US13027502

申请日：2011-02-15

申请人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

发明人： Minoru Miyazaki ,  Akane Murakami ,  Baochun Cui ,  Mutsuo Yamamoto

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L27/14 ,  H01L27/12

CPC分类号： H01L23/53223 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48

摘要： An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

摘要翻译： 一种形成在绝缘衬底上并具有包括半导体层的薄膜晶体管（TFT）的电子电路。 半导体层的厚度小于1500，例如在100和750之间。 主要由钛和氮组成的第一层形成在半导体层上。 由铝构成的第二层形成在第一层的顶部。 第一层和第二层被图案化成导电互连。 第二层的底表面基本上完全与第一层完全接触。 互连件与半导体层具有良好的接触。