发明授权
US5633516A Lattice-mismatched crystal structures and semiconductor device using the
same
失效
晶格错配晶体结构和使用其的半导体器件
- 专利标题： Lattice-mismatched crystal structures and semiconductor device using the same
- 专利标题（中）： 晶格错配晶体结构和使用其的半导体器件
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申请号： US506193申请日： 1995-07-24
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公开(公告)号： US5633516A公开(公告)日： 1997-05-27
- 发明人: Tomoyoshi Mishima , Katsuhiko Higuchi , Mitsuhiro Mori , Makoto Kudo , Chushiro Kusano
- 申请人： Tomoyoshi Mishima , Katsuhiko Higuchi , Mitsuhiro Mori , Makoto Kudo , Chushiro Kusano
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-172252 19940725
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/338 ; H01L29/205 ; H01L29/778 ; H01L29/812 ; H01S5/223 ; H01S5/32 ; H01L31/0328
摘要：
A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.