发明授权
- 专利标题: Semiconductor device comprising a salicide structure
- 专利标题(中): 包括硅化物结构的半导体器件
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申请号: US575194申请日: 1995-12-20
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公开(公告)号: US5635746A公开(公告)日: 1997-06-03
- 发明人: Masatoshi Kimura , Masao Sugiyama
- 申请人: Masatoshi Kimura , Masao Sugiyama
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-170968 19950706
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/285 ; H01L21/336 ; H01L21/8234 ; H01L21/8238 ; H01L29/76
摘要:
After formation a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate, and then the Ti layer is silicided in self-alignment by a heat treatment, whereby a high resistivity TixNySiz mixing layer is formed the predetermined region on the gate electrode and the source/drain regions 10, and a low resistivity TiSi.sub.2 layer 12 is formed on another region.
公开/授权文献
- US5061021A Flat file 公开/授权日:1991-10-29