发明授权
- 专利标题： Semiconductor device manufacturing method including dry oxidation
- 专利标题（中）： 半导体器件制造方法包括干法氧化
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申请号： US701454申请日： 1996-08-22
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公开(公告)号： US5637528A公开(公告)日： 1997-06-10
- 发明人: Masaaki Higashitani , Kenichi Hikazutani
- 申请人： Masaaki Higashitani , Kenichi Hikazutani
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-084474 19940422
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/76 ; H01L21/762 ; H01L21/8242 ; H01L27/10 ; H01L27/108
摘要：
A method of manufacturing a semiconductor device including the steps of: (a) forming a mask layer of a desired pattern on a silicon substrate surface or on an SiO.sub.2 strain absorbing layer formed on the silicon substrate surface; (b) selectively oxidizing the silicon substrate in a dry oxygen atmosphere by using the mask layer as an oxidation mask; and (c) selectively oxidizing the silicon substrate in an atmosphere of dry oxygen mixed with gas containing halogen element, wherein a field oxide film having a thickness of 100 nm or more is formed. The first and second oxidizing steps (b) and (c) are preferably performed at temperatures between 950.degree. C. and 1200.degree. C. A field oxide film with a short bird's beak can be formed while maintaining a relatively high oxidation speed and preventing generation of a white ribbon.
公开/授权文献
- US4031755A Tri dimensional fluid flow sensing device 公开/授权日：1977-06-28
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