公开(公告)号：US06187600B1

公开(公告)日：2001-02-13

申请号：US09175404

申请日：1998-10-20

申请人： Yoichi Fujisawa ,  Kaoru Ogawa ,  Kenichi Hikazutani

发明人： Yoichi Fujisawa ,  Kaoru Ogawa ,  Kenichi Hikazutani

IPC分类号： G01R3126

CPC分类号： H01L22/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A surface layer portion of a silicon substrate is etched by using a mixed solution which contains ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and water (H2O) at a weight ratio of 1:(1.3 to 2.65):(275 to 433). The density of the etch pits which have occurred in a surface of the silicon substrate whose surface layer portion was etched by the etching step is measured. The crystal quality, etc. of the silicon substrate are evaluated before a process for manufacturing semiconductor devices using such silicon substrates, in order to avoid a lowering of the yields of the semiconductor devices.

摘要翻译： 使用含有氢氧化铵（NH 4 OH），过氧化氢（H 2 O 2）和水（H 2 O）的混合溶液，以1：（1.3〜2.65）：（275〜433）的比例蚀刻硅衬底的表层部分 ）。 测量在通过蚀刻步骤蚀刻表面层部分的硅衬底的表面中发生的蚀刻凹坑的密度。 在制造使用这种硅衬底的半导体器件的工艺之前，对硅衬底的晶体质量进行评估，以避免半导体器件的产量降低。

公开(公告)号：US20050221556A1

公开(公告)日：2005-10-06

申请号：US11099699

申请日：2005-04-06

申请人： Toshiro Futatsugi ,  Naoto Horiguchi ,  Ken-ichi Okabe ,  Kenichi Hikazutani

发明人： Toshiro Futatsugi ,  Naoto Horiguchi ,  Ken-ichi Okabe ,  Kenichi Hikazutani

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/06 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L28/40 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L27/0629 ,  H01L29/94

摘要： A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of the semiconductor substrate, by implanting impurities at a second dose; and forms, by a thermal oxidation method, a capacitor insulation film having a first thickness on the first impurity diffusion region and forms an oxide film having a second thickness which is thicker than the first thickness on the second area.

摘要翻译： 一种制造半导体器件的方法，包括：通过以第一剂量注入杂质，在半导体衬底的第一区域中形成第一杂质扩散区域作为电容器的下电极; 通过以第二剂量注入杂质，在半导体衬底的端部的第二区域中形成第二杂质扩散区; 并通过热氧化法形成在第一杂质扩散区上具有第一厚度的电容器绝缘膜，并形成第二厚度比第二区域厚的第二厚度的氧化膜。

公开(公告)号：US4980022A

公开(公告)日：1990-12-25

申请号：US488556

申请日：1990-03-05

申请人： Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.

公开(公告)号：US4961820A

公开(公告)日：1990-10-09

申请号：US361178

申请日：1989-06-05

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： C23G5/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.

公开(公告)号：US07468297B2

公开(公告)日：2008-12-23

申请号：US11099699

申请日：2005-04-06

申请人： Toshiro Futatsugi ,  Naoto Horiguchi ,  Ken-ichi Okabe ,  Kenichi Hikazutani

发明人： Toshiro Futatsugi ,  Naoto Horiguchi ,  Ken-ichi Okabe ,  Kenichi Hikazutani

IPC分类号： H01L21/8242

CPC分类号： H01L28/40 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L27/0629 ,  H01L29/94

摘要： A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of the semiconductor substrate, by implanting impurities at a second dose; and forms, by a thermal oxidation method, a capacitor insulation film having a first thickness on the first impurity diffusion region and forms an oxide film having a second thickness which is thicker than the first thickness on the second area.

摘要翻译： 一种制造半导体器件的方法，包括：通过以第一剂量注入杂质，在半导体衬底的第一区域中形成第一杂质扩散区域作为电容器的下电极; 通过以第二剂量注入杂质，在半导体衬底的端部的第二区域中形成第二杂质扩散区; 并通过热氧化法形成在第一杂质扩散区上具有第一厚度的电容器绝缘膜，并形成第二厚度比第二区域厚的第二厚度的氧化膜。

公开(公告)号：US5057187A

公开(公告)日：1991-10-15

申请号：US524934

申请日：1990-05-18

申请人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Keisuke Shinagawa ,  Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： C23G5/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： Plasma ashing methods, for moving a resist material formed on a ground layer of a semiconductor device during fabrication of said semiconductor, are performed by using one of three kinds of reactant gases each composed of three different gases. Plasma ashing is performed: at an ashing rate of 0.5 .mu.m/min at 160.degree. C. and with an activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.38 eV and without etching the ground layer when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and at an ashing rate of 0.5 .mu.m/min at 140.degree. C., with an activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.

公开(公告)号：US06709959B2

公开(公告)日：2004-03-23

申请号：US09472829

申请日：1999-12-28

申请人： Masataka Kase ,  Toshiki Miyake ,  Mitsuaki Hori ,  Kenichi Hikazutani ,  Manabu Nakamura ,  Takayuki Wada ,  Yoshikazu Kataoka

发明人： Masataka Kase ,  Toshiki Miyake ,  Mitsuaki Hori ,  Kenichi Hikazutani ,  Manabu Nakamura ,  Takayuki Wada ,  Yoshikazu Kataoka

IPC分类号： H01L21265

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823878

摘要： A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.

摘要翻译： 通过离子注入工艺将杂质元素引入Si衬底中，通过使得由Si衬底中由杂质元素形成的结的深度小于约50nm的能量集合来制造半导体器件，然后将 衬底，其中所述方法还包括在离子注入工艺步骤之前从Si衬底的表面除去氧化物膜的步骤。

公开(公告)号：US5637528A

公开(公告)日：1997-06-10

申请号：US701454

申请日：1996-08-22

申请人： Masaaki Higashitani ,  Kenichi Hikazutani

发明人： Masaaki Higashitani ,  Kenichi Hikazutani

IPC分类号： H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/76202

摘要： A method of manufacturing a semiconductor device including the steps of: (a) forming a mask layer of a desired pattern on a silicon substrate surface or on an SiO.sub.2 strain absorbing layer formed on the silicon substrate surface; (b) selectively oxidizing the silicon substrate in a dry oxygen atmosphere by using the mask layer as an oxidation mask; and (c) selectively oxidizing the silicon substrate in an atmosphere of dry oxygen mixed with gas containing halogen element, wherein a field oxide film having a thickness of 100 nm or more is formed. The first and second oxidizing steps (b) and (c) are preferably performed at temperatures between 950.degree. C. and 1200.degree. C. A field oxide film with a short bird's beak can be formed while maintaining a relatively high oxidation speed and preventing generation of a white ribbon.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（a）在硅衬底表面或形成在硅衬底表面上的SiO 2应变吸收层上形成所需图案的掩模层; （b）通过使用掩模层作为氧化掩模在干氧气氛中选择性氧化硅衬底; 和（c）在与包含卤素元素的气体混合的干燥氧气气氛中选择性氧化硅衬底，其中形成厚度为100nm以上的场氧化物膜。 第一和第二氧化步骤（b）和（c）优选在950℃至1200℃的温度下进行。可以形成具有短鸟喙的场氧化膜，同时保持较高的氧化速度并防止产生 的白色丝带。

公开(公告)号：US4983254A

公开(公告)日：1991-01-08

申请号：US460798

申请日：1990-01-04

申请人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Kenichi Hikazutani

发明人： Shuzo Fujimura ,  Keisuke Shinagawa ,  Kenichi Hikazutani

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： A process for stripping an organic material, which comprises forming gases including a gas containing oxygen and a gas containing a halogen into plasma in a plasma chamber, and supplying an active species of the halogen in the gas formed plasma to a reaction chamber to strip the organic material in the reaction chamber, wherein one mole or more of water vapor based upon two moles of the halogen molecule is fed to the reaction chamber, and the active species of the halogen are removed before contact thereof with the organic material.