发明授权
- 专利标题: Method of fabricating circuit elements on an insulating substrate
- 专利标题(中): 在绝缘基板上制作电路元件的方法
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申请号: US133211申请日: 1993-10-07
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公开(公告)号: US5639686A公开(公告)日: 1997-06-17
- 发明人: Makoto Hirano , Kazuyoshi Asai , Yuhki Imai , Masami Tokumitsu , Tsuneo Tokumitsu , Ichihiko Toyoda
- 申请人: Makoto Hirano , Kazuyoshi Asai , Yuhki Imai , Masami Tokumitsu , Tsuneo Tokumitsu , Ichihiko Toyoda
- 申请人地址: JPX Tokyo
- 专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-299500 19901105; JPX3-042954 19910215; JPX3-042955 19910215; JPX3-053355 19910225; JPX3-062725 19910304; JPX3-062726 19910304; JPX3-195001 19910710
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; H01L21/338 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L27/13 ; H01L21/44 ; H01L21/48
摘要:
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower circuit resistance and lower parasitic interactions; an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyimide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.
公开/授权文献
- US5995063A Antenna structure 公开/授权日:1999-11-30
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