Invention Grant
US5652157A Forming a gate electrode on a semiconductor substrate by using a
T-shaped dummy gate
失效
通过使用T形虚拟栅极在半导体衬底上形成栅电极
- Patent Title: Forming a gate electrode on a semiconductor substrate by using a T-shaped dummy gate
- Patent Title (中): 通过使用T形虚拟栅极在半导体衬底上形成栅电极
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Application No.: US608520Application Date: 1996-02-28
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Publication No.: US5652157APublication Date: 1997-07-29
- Inventor: Makoto Hirano , Kazuyoshi Asai , Yuhki Imai , Masami Tokumitsu , Tsuneo Tokumitsu , Ichihiko Toyoda
- Applicant: Makoto Hirano , Kazuyoshi Asai , Yuhki Imai , Masami Tokumitsu , Tsuneo Tokumitsu , Ichihiko Toyoda
- Applicant Address: JPX Tokyo
- Assignee: Nippon Telegraph And Telephone Corporation
- Current Assignee: Nippon Telegraph And Telephone Corporation
- Current Assignee Address: JPX Tokyo
- Priority: JPX2-299500 19901105; JPX3-042954 19910215; JPX3-042955 19910215; JPX3-053355 19910225; JPX3-062725 19910304; JPX3-062726 19910304; JPX3-195001 19910710
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/338 ; H01L23/522 ; H01L23/528 ; H01L23/66 ; H01L27/13 ; H01L21/265
Abstract:
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower resistance and lower parasitic interactions, an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyamide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.
Public/Granted literature
- US5099075A Process for removing double metal cyanide catalyst residues from a polyol Public/Granted day:1992-03-24
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