Invention Grant
US5652157A Forming a gate electrode on a semiconductor substrate by using a T-shaped dummy gate 失效
通过使用T形虚拟栅极在半导体衬底上形成栅电极

Forming a gate electrode on a semiconductor substrate by using a
T-shaped dummy gate
Abstract:
A new design concept is presented and demonstrated for the fabrication of active and passive components in integrated circuit (IC) devices for microwave signal transmission. High circuit packing density is desirable but the current configurations of the conventional flat strip type conductors present physical limitations to achieving such an objective. The new conductor configuration not only overcomes such circuit packing problems of the conventional line design, but provides additional improvements in performance parameters, such as lower resistance and lower parasitic interactions, an ability to fabricate circuits to design specifications and to improve reliability at low cost. The new concept has been applied to the fabrication of transmission lines, capacitors, inductors, air bridges and to formulating the fabrication steps for a FET. Polyamide film enables an improved fabrication step to be performed in the invention, and a new processing technique for polyimide material has also been demonstrated.
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