发明授权
- 专利标题： Semiconductor device and a method of manufacturing thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US632195申请日： 1996-04-15
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公开(公告)号： US5652186A公开(公告)日： 1997-07-29
- 发明人: Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
- 申请人： Tomonori Okudaira , Takeharu Kuroiwa , Nobuo Fujiwara , Keiichiro Kashihara
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-152364 19930623
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/3205 ; H01L21/768 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L23/522 ; H01L27/04 ; H01L27/105 ; H01L21/00
摘要：
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
公开/授权文献
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