发明授权
US5654567A Capacitor, electrode or wiring structure, and semi conductor device
失效
电容器，电极或布线结构以及半导体器件
- 专利标题： Capacitor, electrode or wiring structure, and semi conductor device
- 专利标题（中）： 电容器，电极或布线结构以及半导体器件
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申请号： US724159申请日： 1996-10-01
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公开(公告)号： US5654567A公开(公告)日： 1997-08-05
- 发明人: Ken Numata , Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura
- 申请人： Ken Numata , Katsuhiro Aoki , Yukio Fukuda , Akitoshi Nishimura
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 优先权： JPX6-039093 19940214
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L23/52 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/78 ; H01L23/48 ; H01L27/02 ; H01L29/68
摘要：
A capacitor, electrode, or wiring structure having an alpha ray emitting source (in particular, a Pt electrode), and an alpha ray shielding layer 18, having at least one type selected from the group of simple metals of nickel, cobalt, copper, and tungsten, their compounds or alloys made of at least two types of these simple metals, and compounds and alloys made of these simple metals and silicon is provided. It is possible to shield off the alpha ray effectively, to suppress generation of soft errors, to enable the use of Pt and other new materials in making the electrodes and wiring, and to reduce the cost of the mold resin.
公开/授权文献
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