发明授权
- 专利标题： Plasma clean with hydrogen gas
- 专利标题（中）： 用氢气清洗等离子体
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申请号： US615437申请日： 1996-03-14
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公开(公告)号： US5660682A公开(公告)日： 1997-08-26
- 发明人: Joe W. Zhao , Zhihai Wang , Wilbur G. Catabay
- 申请人： Joe W. Zhao , Zhihai Wang , Wilbur G. Catabay
- 申请人地址： CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： CA Milpitas
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/304 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/768 ; H01L21/461
摘要：
A method of removing material from an integrated circuit. The integrated circuit is placed within a reaction chamber, and a flow of argon and a flow of hydrogen are introduced into the reaction chamber, where the flow of hydrogen is greater than the flow of argon. The flows of argon and hydrogen are energized to form a plasma, and the material is removed from the integrated circuit by reaction of the material with the energized flows of argon and hydrogen to form gaseous products, which are pumped out of the reaction chamber. The plasma and flows of argon and hydrogen are discontinued when a desired amount of material has been removed, and the integrated circuit is removed from the reaction chamber.
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