发明授权
- 专利标题: Method of heat-treating a glass substrate
- 专利标题(中): 玻璃基板的热处理方法
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申请号: US311275申请日: 1994-09-23
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公开(公告)号: US5674304A公开(公告)日: 1997-10-07
- 发明人: Takeshi Fukada , Mitsunori Sakama , Satoshi Teramoto
- 申请人: Takeshi Fukada , Mitsunori Sakama , Satoshi Teramoto
- 申请人地址: JPX Kanagawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX5-279029 19931012
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; C03B25/00 ; C03B32/00 ; C03C17/00 ; C03C17/22 ; C03C17/34 ; H01L21/324 ; H01L29/78 ; H01L29/786 ; C03D25/00
摘要:
A method of heat-treating a glass substrate where the substrate is thermally treated (such as the formation of films, growth of films, and oxidation) around or above its strain point. After thermally treating the substrate around or above its strain point the glass substrate may be slowly cooled at a rate of 0.01.degree. to 0.5.degree. C./min to achieve maximum shrinkage of the substrate. Following further thermal treatments the substrate may be quickly cooled at a rate of 10.degree. C./min to 300.degree. C./sec to suppress shrinkage of the glass substrate. The substrate can have films such as aluminum nitrate films, silicon oxide films, silicon films, insulating films, semiconductor films, etc. Film formation can occur either before or after thermal treatment of the substrate around or above its strain point and before further thermal treatments.
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