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    Method of heat-treating a glass substrate
    6.
    发明授权
    Method of heat-treating a glass substrate 失效
    玻璃基板的热处理方法

    公开(公告)号：US5674304A

    公开(公告)日：1997-10-07

    申请号：US311275

    申请日：1994-09-23

    申请人： Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

    发明人： Takeshi Fukada ,  Mitsunori Sakama ,  Satoshi Teramoto

    IPC分类号： C23C16/34 ,  C03B25/00 ,  C03B32/00 ,  C03C17/00 ,  C03C17/22 ,  C03C17/34 ,  H01L21/324 ,  H01L29/78 ,  H01L29/786 ,  C03D25/00

    CPC分类号： C03C17/3482 ,  C03B25/00 ,  C03B32/00 ,  C03C17/001 ,  C03C17/22 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/32 ,  Y02P40/57

    摘要： A method of heat-treating a glass substrate where the substrate is thermally treated (such as the formation of films, growth of films, and oxidation) around or above its strain point. After thermally treating the substrate around or above its strain point the glass substrate may be slowly cooled at a rate of 0.01.degree. to 0.5.degree. C./min to achieve maximum shrinkage of the substrate. Following further thermal treatments the substrate may be quickly cooled at a rate of 10.degree. C./min to 300.degree. C./sec to suppress shrinkage of the glass substrate. The substrate can have films such as aluminum nitrate films, silicon oxide films, silicon films, insulating films, semiconductor films, etc. Film formation can occur either before or after thermal treatment of the substrate around or above its strain point and before further thermal treatments.

    摘要翻译： 对基板进行热处理（例如膜的形成，膜的生长和氧化）的玻璃基板的热应变点附近或之上的热处理方法。 在其应变点之上或之上对基底进行热处理之后，玻璃基底可以以0.01至0.5℃/分钟的速率缓慢冷却以实现基底的最大收缩。 进一步热处理后，可以以10℃/ min至300℃/秒的速度快速冷却基板，以抑制玻璃基板的收缩。 基板可以具有诸如硝酸铝膜，氧化硅膜，硅膜，绝缘膜，半导体膜等的膜。成膜可以在其应变点周围或之上的基板的热处理之前或之后进行，并且在进一步的热处理之前 。

    Insulating film formed using an organic silane and method of producing semiconductor device
    8.
    发明授权
    Insulating film formed using an organic silane and method of producing semiconductor device 有权
    使用有机硅烷形成的绝缘膜和制造半导体器件的方法

    公开(公告)号：US6025630A

    公开(公告)日：2000-02-15

    申请号：US190828

    申请日：1998-11-12

    申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

    发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

    IPC分类号： H01L21/316 ,  H01L27/01 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

    摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

    摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷等离子体CVD，形成氧化硅膜以覆盖岛状非单晶硅区域，而氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。