Invention Grant
US5680366A Data transmission circuit, data line driving circuit, amplifying
circuit, semiconductor integrated circuit, and semiconductor memory
失效
数据传输电路,数据线驱动电路,放大电路,半导体集成电路和半导体存储器
- Patent Title: Data transmission circuit, data line driving circuit, amplifying circuit, semiconductor integrated circuit, and semiconductor memory
- Patent Title (中): 数据传输电路,数据线驱动电路,放大电路,半导体集成电路和半导体存储器
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Application No.: US573133Application Date: 1995-12-15
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Publication No.: US5680366APublication Date: 1997-10-21
- Inventor: Hisakazu Kotani , Hironori Akamatsu , Toshio Yamada , Akihiro Sawada , Hirohito Kikukawa , Masashi Agata , Shunichi Iwanari
- Applicant: Hisakazu Kotani , Hironori Akamatsu , Toshio Yamada , Akihiro Sawada , Hirohito Kikukawa , Masashi Agata , Shunichi Iwanari
- Applicant Address: JPX Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JPX Osaka
- Priority: JPX5-145938 19930617; JPX5-258070 19931015
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C7/10 ; G11C11/4096 ; H03K3/26
Abstract:
In a driver circuit for driving a pair of data lines, the amplitude of a differential input signal is reduced from 2.5 V to 0.6 V, which is smaller than a conventional lower-limit source voltage (approximately 1.5 V). The amplitude of the differential signal transmitted through the pair of data lines is amplified to 2.5 V by an amplifying circuit and the resulting signal is then latched by a latch circuit. After the latching by the latch circuit, the operation of the amplifying circuit is halted. The driver circuit is constituted solely by a plurality of NMOS transistors so as not to increase a leakage current flowing in the off state. Here, the threshold voltage of the NMOS transistor positioned on the ground side is reduced to a conventional lower-limit value (0.3 V to 0.6 V), while the threshold voltage of the NMOS transistor on the power-source side to a value lower than the above lower-limit value (0 V to 0.3 V), thereby enhancing a driving force of the NMOS transistor on the power-source side.
Public/Granted literature
- US5069181A Output control apparatus for an internal combustion engine Public/Granted day:1991-12-03
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