发明授权
- 专利标题: Misted deposition method of fabricating layered superlattice materials
- 专利标题(中): 分层超晶格材料的薄膜沉积方法
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申请号: US480477申请日: 1995-06-07
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公开(公告)号: US5688565A公开(公告)日: 1997-11-18
- 发明人: Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
- 申请人: Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
- 申请人地址: CO Colorado Springs
- 专利权人: Symetrix Corporation
- 当前专利权人: Symetrix Corporation
- 当前专利权人地址: CO Colorado Springs
- 主分类号: C23C4/12
- IPC分类号: C23C4/12 ; C23C16/44 ; C23C16/448 ; C23C16/455 ; C23C16/46 ; C23C16/48 ; C23C16/52 ; C23C18/12 ; C23C18/14 ; C30B7/00 ; H01C7/10 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L27/108 ; H01L27/115 ; H05K3/10 ; B05D3/00
摘要:
A precursor liquid comprising several metal 2-ethylhexanoates, such as stroritium tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a potion of the layered superlattice material film in a component of the integrated circuit.
公开/授权文献
- US6136721A Method and apparatus for dry etching 公开/授权日:2000-10-24
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