- 专利标题： Construction that prevents the undercut of interconnect lines in plasma metal etch systems
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申请号： US565308申请日： 1995-11-30
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公开(公告)号： US5688717A公开(公告)日： 1997-11-18
- 发明人: Lewis Shen , Sheshadri Ramaswami , Mark Chang , Robin Cheung
- 申请人： Lewis Shen , Sheshadri Ramaswami , Mark Chang , Robin Cheung
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L23/532 ; H01L21/28
摘要：
A Ti.sub.x N.sub.y layer, not necessarily stoichiometric, is interposed between a titanium or aluminum interconnect layer to improve adhesion and prevent re-entrant undercutting and lifting of the interconnect layer during the process of patterning and plasma etching to form interconnect lines on a substrate, such as an oxide.
公开/授权文献
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