发明授权
US5705419A Controllable isotropic plasma etching technique for the suppression of
stringers in memory cells
失效
用于抑制存储器单元中的桁条的可控等向等离子体蚀刻技术
- 专利标题: Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
- 专利标题(中): 用于抑制存储器单元中的桁条的可控等向等离子体蚀刻技术
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申请号: US281525申请日: 1994-07-27
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公开(公告)号: US5705419A公开(公告)日: 1998-01-06
- 发明人: Jeffrey Robert Perry , S. M. Reza Sadjadi , Kristen Ann Luttinger
- 申请人: Jeffrey Robert Perry , S. M. Reza Sadjadi , Kristen Ann Luttinger
- 申请人地址: CA Santa Clara
- 专利权人: National Semiconductor Corp.
- 当前专利权人: National Semiconductor Corp.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/311 ; H01L21/3213 ; H01L21/8247 ; H01L27/115 ; H01L21/265
摘要:
In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
公开/授权文献
- US4442935A Pallet magazine 公开/授权日:1984-04-17