保存成功
保存失败
公开(公告)号:US5705419A
公开(公告)日:1998-01-06
申请号:US281525
申请日:1994-07-27
申请人: Jeffrey Robert Perry , S. M. Reza Sadjadi , Kristen Ann Luttinger
发明人: Jeffrey Robert Perry , S. M. Reza Sadjadi , Kristen Ann Luttinger
IPC分类号: H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/8247 , H01L27/115 , H01L21/265
CPC分类号: H01L27/11521 , H01L21/28273 , H01L21/31116 , H01L21/32137 , H01L27/115 , Y10S438/954 , Y10S438/963
摘要: In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
摘要翻译: 在存储单元的制造中,以防止相邻单元之间的桁条形成而不会削弱存储单元的侧壁的方式来控制水平蚀刻。