发明授权
US5705441A Ion implant silicon nitride mask for a silicide free contact region in a
self aligned silicide process
失效
离子注入氮化硅掩模，用于自对准硅化物工艺中的无硅化物接触区域
- 专利标题： Ion implant silicon nitride mask for a silicide free contact region in a self aligned silicide process
- 专利标题（中）： 离子注入氮化硅掩模，用于自对准硅化物工艺中的无硅化物接触区域
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申请号： US618177申请日： 1996-03-19
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公开(公告)号： US5705441A公开(公告)日： 1998-01-06
- 发明人: Jau-Jey Wang , Yuan-Lung Liu
- 申请人： Jau-Jey Wang , Yuan-Lung Liu
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L27/02 ; H01L21/28
摘要：
A method is described for forming a high contact resistance region within the drain region or source region of an insulated gate field effect transistor as part of a high resistance resistor for electrostatic discharge protection of the field effect transistor. The silicide free contact region is formed as part of a self aligned silicide, or salicide, contact process. Nitrogen ion implantation followed by annealing is used to form a silicon nitride mask at the silicide free contact region. The mask prevents the formation of low contact resistance metal silicide at the silicide free contact region during the salicide process. Low resistance contacts to the gate electrode, source, and drain are formed using metal silicide.
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