发明授权
US5726070A Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM
失效
富氧隧道氧化物通过氧气注入形成快闪EEPROM
- 专利标题： Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM
- 专利标题（中）： 富氧隧道氧化物通过氧气注入形成快闪EEPROM
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申请号： US622692申请日： 1996-03-26
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公开(公告)号： US5726070A公开(公告)日： 1998-03-10
- 发明人: Gary Hong , Ching-Hsiang Hsu
- 申请人： Gary Hong , Ching-Hsiang Hsu
- 申请人地址： TWX Hsin-Chu
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L29/51 ; H01L29/788 ; H01L21/8247
摘要：
A process for forming an EEPROM having silicon rich tunnel oxide is disclosed. This oxide is used in the formation of flash EEPROMs and results in high tunneling current at low voltages. The oxide also results in EEPROMs having good endurance. A layer of silicon enriched with oxygen is formed between the substrate and the insulating layer separating the substrate from the floating gate.
公开/授权文献
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