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发明授权
US5730802A Vapor growth apparatus and vapor growth method capable of growing good productivity 失效
能够以良好的生产率以原子层为单位生长具有均匀度和界面清晰度的化合物半导体层的气相生长装置和气相生长法

Vapor growth apparatus and vapor growth method capable of growing good productivity
摘要：
A vapor growth apparatus and a vapor growth method is capable of growing a compound semiconductor layer having an evenness and an interfacial sharpness in units of atomic layers with a good productivity. A growth chamber has a cylindrical portion and an end plate which closes an upstream end of the cylindrical portion. The end plate is provided with a cation gas material supply inlet and an anion material gas supply inlet, while an exhaust device is provided on the downstream side of the cylindrical portion. A substrate holder having a substrate support surface is provided in the cylinder portion. A gas separating member separates flow paths of material gases from each other, thereby forming on the substrate support surface a plurality of material gas supply areas to which the material gases are independently supplied. A drive device rotates the substrate holder with a substrate set on the substrate support surface thereof around the center line of the cylindrical portion. Then a cation material and an anion material gas are alternately supplied to the surface of the substrate.
摘要（中）：

气相生长装置和气相生长方法能够以良好的生产率生长具有以原子层为单位的均匀度和界面清晰度的化合物半导体层。 生长室具有圆柱形部分和封闭圆柱形部分的上游端的端板。 端板设置有阳离子气体供给口和阴离子材料气体供给口，同时在圆筒部的下游侧设置有排气装置。 具有基板支撑表面的基板保持器设置在圆筒部分中。 气体分离构件将材料气体的流动路径彼此分离，从而在基板支撑表面上形成多个材料气体供应区域，材料气体被独立地供应到该多个材料气体供应区域。 驱动装置使基板保持器以基板支撑表面上设置的基板围绕圆柱形部分的中心线旋转。 然后将阳离子材料和阴离子材料气体交替地供给到衬底的表面。

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