发明授权
US5740068A Fidelity enhancement of lithographic and reactive-ion-etched images by
optical proximity correction
失效
通过光学邻近校正对光刻和反应离子蚀刻图像的保真度增强
- 专利标题： Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
- 专利标题（中）： 通过光学邻近校正对光刻和反应离子蚀刻图像的保真度增强
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申请号： US655790申请日： 1996-05-30
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公开(公告)号： US5740068A公开(公告)日： 1998-04-14
- 发明人: Lars Wolfgang Liebmann , Robert Thomas Sayah , John Edward Barth, Jr.
- 申请人： Lars Wolfgang Liebmann , Robert Thomas Sayah , John Edward Barth, Jr.
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F1/36 ; G03F7/20 ; H01L21/027 ; G03F7/00 ; H01J37/304
摘要：
A method for performing optical proximity correction is disclosed that not only limits the optical proximity correction to electrically relevant structures, but also improves the accuracy of the corrections by processing individual feature edges, and minimizes the mask manufacturing impacts by avoiding the introduction of jogs into the design. Critical edge regions of the relevant electrical structures are analyzed, sorted and manipulated to receive optical proximity corrections.