摘要:
A method for performing optical proximity correction is disclosed that not only limits the optical proximity correction to electrically relevant structures, but also improves the accuracy of the corrections by processing individual feature edges, and minimizes the mask manufacturing impacts by avoiding the introduction of jogs into the design. Critical edge regions of the relevant electrical structures are analyzed, sorted and manipulated to receive optical proximity corrections.
摘要:
A method automatically locates and eliminates the most frequently encountered phase conflict in phase edge phase shift mask (PSM) designs used in the manufacture of VLSI circuits. The process is implemented as an automatic CAD routine that locates and widens one leg of a three way intersection to avoid phase conflicts. CAD and design rule checking techniques are used to first locate and then to resolve design conflicts prior to actually executing the very time consuming phase shift mask design. The original circuit design is manipulated prior to or as part of the design rule checking, allowing the verification of the manipulations made prior to handing the design off to the mask layout and mask data preparation group.