发明授权
- 专利标题: Hexagonal DRAM array
- 专利标题(中): 六角形DRAM阵列
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申请号: US517153申请日: 1995-08-21
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公开(公告)号: US5742086A公开(公告)日: 1998-04-21
- 发明人: Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
- 申请人: Michael D. Rostoker , James S. Koford , Ranko Scepanovic , Edwin R. Jones , Gobi R. Padmanahben , Ashok K. Kapoor , Valeriy B. Kudryavtsev , Alexander E. Andreev , Stanislav V. Aleshin , Alexander S. Podkolzin
- 申请人地址: CA Milpitas
- 专利权人: LSI Logic Corporation
- 当前专利权人: LSI Logic Corporation
- 当前专利权人地址: CA Milpitas
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G11C5/02 ; G11C5/06 ; H01L23/522 ; H01L23/528 ; H01L27/02 ; H01L27/092 ; H01L27/108 ; H01L27/11 ; H01L27/118 ; H01L29/06 ; H03K19/0944 ; H03K19/0948 ; H01L29/78 ; H01L29/41
摘要:
Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other polygons enabling a variety of cell shapes to be accommodated. Polydirectional non-orthogonal three layer metal routing is disclosed. The architecture may be combined with the tri-directional routing for a particularly advantageous design. In the tri-directional routing arraingement, electrical conductors for interconnecting terminals of microelectronic cells of an integrated circuit preferrably extend in three directions that are angularly displaced from each other by 60.degree.. The conductors that extend in the three directions are preferrably formed in three different layers. A method of minimizing wire length in a semiconductor device is disclosed. A method of minimizing intermetal capacitance in a semiconductor device is disclosed. A novel device called a "tri-ister" is disclosed. Triangular devices are disclosed, including triangular NAND gates, triangular AND gates, and triangular OR gates. A triangular op amp and triode are disclosed. A triangular sense amplifier is disclosed. A DRAM memory array and an SRAM memory array, based upon triangular or parallelogram shaped cells, are disclosed, including a method of interconnecting such arrays. A programmable variable drive transistor is disclosed. CAD algorithms and methods are disclosed for designing and making semiconductor devices, which are particularly applicable to the disclosed architecture and tri-directional three metal layer routing.
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