发明授权
- 专利标题： Method for fabricating a semiconductor device having multilevel interconnections
- 专利标题（中）： 制造具有多层互连的半导体器件的方法
-
申请号： US755198申请日： 1996-11-25
-
公开(公告)号： US5744378A公开(公告)日： 1998-04-28
- 发明人: Tetsuya Homma
- 申请人： Tetsuya Homma
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-312417 19931214
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; C23C16/40 ; C23C16/50 ; C23C16/511 ; H01L21/314 ; H01L21/318 ; H01L21/768 ; H01L23/522 ; H01L21/28
摘要：
At least one of an interlayer insulating film is formed by fluorine contained silicon oxynitride which is obtained by chemical deposition growth process using fluoroalkoxysilane gas, nitrogen gas contained gas, and oxygen gas contained gas. The at least one-film is formed at a temperature of lower than 200.degree. C. As a result, reliability of a semiconductor device to be fabricated as described above is enhanced.
公开/授权文献
- US4089660A Process for contacting a gas with a liquid 公开/授权日：1978-05-16
信息查询
IPC分类:
