发明授权
- 专利标题: Semiconductor memory device having data erasing mechanism
- 专利标题(中): 具有数据擦除机构的半导体存储器件
-
申请号: US785397申请日: 1997-01-21
-
公开(公告)号: US5751636A公开(公告)日: 1998-05-12
- 发明人: Kiyomi Naruke , Tomoko Suzuki , Seiji Yamada , Etsushi Obi , Masamitsu Oshikiri
- 申请人: Kiyomi Naruke , Tomoko Suzuki , Seiji Yamada , Etsushi Obi , Masamitsu Oshikiri
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX3-157063 19910627
- 主分类号: G11C16/16
- IPC分类号: G11C16/16 ; G11C16/34 ; H01L27/115 ; H01L29/788 ; G11C7/00
摘要:
In this invention, charges are extracted from the charge storage portion by means of F-N tunnel current, and then avalanche hot carriers are injected into the storage portion.