- 专利标题: Insulated gate type field effect transistor and method of manufacturing the same
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申请号: US612285申请日: 1996-03-07
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公开(公告)号: US5753943A公开(公告)日: 1998-05-19
- 发明人: Naoto Okabe , Makio Iida , Norihito Tokura
- 申请人: Naoto Okabe , Makio Iida , Norihito Tokura
- 申请人地址: JPX Kariya
- 专利权人: Nippondenso Co., Ltd.
- 当前专利权人: Nippondenso Co., Ltd.
- 当前专利权人地址: JPX Kariya
- 优先权: JPX7-047545 19950307
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/322 ; H01L21/331 ; H01L21/336 ; H01L29/08 ; H01L29/739 ; H01L29/749
摘要:
In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is formed on the semiconductor substrate by vapor-phase epitaxy after the formation of the diffusion region. Thereafter, the surface of the semiconductor layer is flattened, and a gate insulating film and a gate electrode are formed on the flattened semiconductor layer. Further, a well region as well as a source region are formed in the semiconductor layer to form an insulated gate type field effect transistor. As the surface of the semiconductor layer in which the insulated gate type field effect transistor is formed is flattened, even if the embedded region is formed in the wafer, the gate-source insulation withstand voltage characteristic can be prevented from being deteriorated.
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