Invention Grant
- Patent Title: Method for removing a diffusion barrier layer on pad regions
- Patent Title (中): 去除焊盘区域上的扩散阻挡层的方法
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Application No.: US652895Application Date: 1996-05-23
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Publication No.: US5756376APublication Date: 1998-05-26
- Inventor: Yi-Chung Sheng , Chen-Hui Chung , Kuan-Cheng Su
- Applicant: Yi-Chung Sheng , Chen-Hui Chung , Kuan-Cheng Su
- Applicant Address: TWX Hsinchu
- Assignee: United Microelectronics Corporation
- Current Assignee: United Microelectronics Corporation
- Current Assignee Address: TWX Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/485 ; H05K1/00 ; H05K1/03
Abstract:
A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600.degree. C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750.degree. C.
Public/Granted literature
- US4621821A Apparatus for the clamping of elongate workpieces Public/Granted day:1986-11-11
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