发明授权
- 专利标题: Method for removing a diffusion barrier layer on pad regions
- 专利标题(中): 去除焊盘区域上的扩散阻挡层的方法
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申请号: US652895申请日: 1996-05-23
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公开(公告)号: US5756376A公开(公告)日: 1998-05-26
- 发明人: Yi-Chung Sheng , Chen-Hui Chung , Kuan-Cheng Su
- 申请人: Yi-Chung Sheng , Chen-Hui Chung , Kuan-Cheng Su
- 申请人地址: TWX Hsinchu
- 专利权人: United Microelectronics Corporation
- 当前专利权人: United Microelectronics Corporation
- 当前专利权人地址: TWX Hsinchu
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/485 ; H05K1/00 ; H05K1/03
摘要:
A method for removing a diffusion barrier layer on pad regions and diminishing the effect of plasma ions induced when removing a photoresist layer by a plasma asher. A two stage rapid thermal processing step is applied to the partially-removed diffusion barrier layer before a metal layer is formed. The first stage lasts a longer period of time at a lower temperature, for example, in the range of between 50 and 60 seconds at a temperature of about 600.degree. C. The second stage lasts a shorter period of time at a higher temperature, for example, in the range of between 20 and 30 seconds at a temperature of about 750.degree. C.
公开/授权文献
- US4621821A Apparatus for the clamping of elongate workpieces 公开/授权日:1986-11-11