发明授权
- 专利标题： Method of etching silicon nitride film
- 专利标题（中）： 蚀刻氮化硅膜的方法
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申请号： US426693申请日： 1995-04-24
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公开(公告)号： US5756402A公开(公告)日： 1998-05-26
- 发明人: Sadayuki Jimbo , Tokuhisa Ohiwa , Haruki Mori , Akira Kobayashi , Tadashi Shinmura , Yasuyuki Taniguchi
- 申请人： Sadayuki Jimbo , Tokuhisa Ohiwa , Haruki Mori , Akira Kobayashi , Tadashi Shinmura , Yasuyuki Taniguchi
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-349325 19921228
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/302
摘要：
A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical. A method for etching a silicon nitride film, includes the steps of exciting gas containing fluorine and oxygen gas, thereby generating a fluorine radical and an oxygen radical, supplying the fluorine radical and the oxygen radical close to a substrate having the silicon nitride film and supplying gas of a compound containing a hydroxyl close to the substrate, reacting the fluorine radical, the oxygen radical and the compound containing the hydroxyl, thereby generating a compound of the fluorine radical, the oxygen radical and a compound of fluorine and hydrogen, and selectively etching the silicon nitride film from the substrate with the compound of the fluorine radical, the oxygen radical and the compound of fluorine and hydrogen.
公开/授权文献
- USD325945S Stretching exerciser for golfers or the like 公开/授权日：1992-05-05
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