Anti-fouling surface structure, anti-fouling covering material and
method of planting ribbons for producing anti-fouling surface structure
and covering material
    1.
    发明授权
    Anti-fouling surface structure, anti-fouling covering material and method of planting ribbons for producing anti-fouling surface structure and covering material 失效
    防污表面结构,防污覆盖材料以及生产防污面结构和覆盖材料的丝带生产方法

    公开(公告)号:US4923730A

    公开(公告)日:1990-05-08

    申请号:US227015

    申请日:1988-08-02

    IPC分类号: E02B3/04 E02B17/00

    摘要: An anti-fouling surface structure having a multiplicity of ribbons made of plastics thin film and planted on a surface and a method of planting ribbons on a substrate. The ribbons fixed to the surface flutter in sea-water so as to prevent marine growth on the surface. The anti-fouling surface structure may be realized by directly planting ribbons on the surface of a structure to be protected or covering the surface of the structure by a covering material which has a multiplicity of ribbons planted on a substrate sheet or string. The method of planting ribbons comprises the steps of slitting a wide film into a multiplicity of parallel ribbons, flexing and folding the multiplicity of ribbons simultaneously in the direction perpendicular to the slitting direction thereby forming crests ribbons on opposite sides, bonding the ribbons to a substrate at their crests on one side, and cutting the crests opposite to the bonded crests. The method may be such that different substrates are bonded to the crests of the ribbons on opposite sides and then the ribbons are cut at their portions intermediate between the bonded crests.

    摘要翻译: 具有由塑料薄膜制成的多个带子并且被种植在表面上的防污表面结构以及在基板上种植带状物的方法。 固定在表面上的丝带在海水中颤动,以防止表面上的海洋生长。 防污表面结构可以通过在被保护的结构的表面上直接种植带状物或通过覆盖材料覆盖覆盖该结构体的表面来实现,该覆盖材料具有种​​植在基片或串上的多个条带。 种植带的方法包括以下步骤:将宽膜切割成多个平行带,在垂直于切割方向的方向上同时弯曲和折叠多个条带,从而在相对侧上形成波峰带,将带粘合到基底 在一侧的波峰处,并切割与粘结的波峰相对的波峰。 该方法可以使得不同的基底在相对侧上的带的顶部结合,然后在它们在接合的波峰之间的部分切割带。

    Semiconductor device having ferroelectric capacitor and method for manufacturing the same
    3.
    发明授权
    Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
    具有铁电电容器的半导体器件及其制造方法

    公开(公告)号:US06762065B2

    公开(公告)日:2004-07-13

    申请号:US10448359

    申请日:2003-05-30

    IPC分类号: H01L2100

    摘要: A lower electrode is formed on an insulating film on a semiconductor substrate. A pair of ferroelectric films are formed on the lower electrode separately from each other. An upper electrode is formed on each of the pair of ferroelectric films. A portion of the lower electrode on which the ferroelectric film is formed is thicker than a portion thereof on which the ferroelectric film is not formed. Such a structure is obtained by sequentially depositing the lower electrode, the ferroelectric film, and the upper electrode on the insulating film, forming a mask on the upper-electrode, using this mask to etch the upper-electrode and the ferroelectric film to thereby pattern a pair of upper electrodes and a pair of ferroelectric electrodes, forming such a mask that continuously covers the pair of upper electrodes and the pair of ferroelectric films, and then etching the lower-electrode material film.

    摘要翻译: 在半导体衬底上的绝缘膜上形成下电极。 一对铁电体膜分别形成在下电极上。 在一对铁电体膜中的每一个上形成上电极。 形成铁电体膜的下部电极的一部分比不形成强电介质膜的部分厚。 通过使用该掩模在绝缘膜上依次沉积下电极,铁电体膜和上电极,在上电极上形成掩模,以蚀刻上电极和铁电体膜,从而形成图案 一对上电极和一对铁电电极,形成连续地覆盖一对上电极和一对铁电体膜的掩模,然后蚀刻下电极材料膜。

    Semiconductor device having ferroelectric capacitor and method for manufacturing the same
    4.
    发明授权
    Semiconductor device having ferroelectric capacitor and method for manufacturing the same 失效
    具有铁电电容器的半导体装置及其制造方法

    公开(公告)号:US06603161B2

    公开(公告)日:2003-08-05

    申请号:US09801920

    申请日:2001-03-09

    IPC分类号: H01L2976

    摘要: There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

    摘要翻译: 提供一种半导体器件,其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器,其中所述强电介质电容器包括:形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。 铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。 上部铁电膜被金属化,并防止氢在下部铁电层中扩散。 堆叠的铁电体膜的晶粒优选不同。

    Method of etching silicon nitride film
    5.
    发明授权
    Method of etching silicon nitride film 失效
    蚀刻氮化硅膜的方法

    公开(公告)号:US5756402A

    公开(公告)日:1998-05-26

    申请号:US426693

    申请日:1995-04-24

    IPC分类号: H01L21/311 H01L21/302

    CPC分类号: H01L21/31116

    摘要: A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical. A method for etching a silicon nitride film, includes the steps of exciting gas containing fluorine and oxygen gas, thereby generating a fluorine radical and an oxygen radical, supplying the fluorine radical and the oxygen radical close to a substrate having the silicon nitride film and supplying gas of a compound containing a hydroxyl close to the substrate, reacting the fluorine radical, the oxygen radical and the compound containing the hydroxyl, thereby generating a compound of the fluorine radical, the oxygen radical and a compound of fluorine and hydrogen, and selectively etching the silicon nitride film from the substrate with the compound of the fluorine radical, the oxygen radical and the compound of fluorine and hydrogen.

    摘要翻译: 一种用于蚀刻氮化硅膜的方法包括以下步骤:在具有氮化硅膜的衬底附近提供氟基,氟和氢的化合物和氧自由基,并从衬底中选择性地蚀刻氮化硅膜, 氟自由基,氟和氢的化合物和氧自由基。 一种用于蚀刻氮化硅膜的方法包括以下步骤:激发含氟和氧气的气体,从而产生氟基和氧自由基,将氟自由基和氧自由基靠近具有氮化硅膜的基板并供应 含有靠近底物的羟基化合物的气体,使氟自由基,氧自由基和含有羟基的化合物反应,从而产生氟自由基,氧自由基和氟和氢的化合物的化合物,并选择性地蚀刻 来自衬底的氮化硅膜与氟自由基,氧自由基以及氟和氢的化合物组成。

    Acrylic copolymer and polymer composition containing same
    7.
    发明授权
    Acrylic copolymer and polymer composition containing same 失效
    丙烯酸共聚物和含有它们的聚合物组合物

    公开(公告)号:US5719246A

    公开(公告)日:1998-02-17

    申请号:US750797

    申请日:1996-12-20

    摘要: According to the present invention, there is provided an acrylic copolymer having a number average molecular weight of 1000-500,000, which comprises 1-90 % by weight of a structural unit represented by the following general formula ##STR1## (wherein R represents a hydrogen atom or a methyl group) and 99-10 % by weight of a structural unit-derived from an ethylenic unsaturated monomer, an acrylic copolymer composition and a paint containing the same. The coat obtained by applying the acrylic copolymer has excellent abrasion resistance, chemical resistance, flexibility, strength and the like.

    摘要翻译: PCT No.PCT / JP95 / 01202 Sec。 371日期1996年12月20日第 102(e)日期1996年12月20日PCT提交1995年6月16日PCT公布。 WO95 / 35334 PCT出版物 日期1995年12月28日根据本发明,提供数均分子量为1000-500,000的丙烯酸共聚物,其包含1-90重量%的由以下通式表示的结构单元(IMAGE)( I)(其中R表示氢原子或甲基)和99-10重量%的衍生自烯属不饱和单体的结构单元,丙烯酸共聚物组合物和含有它们的涂料。 通过应用丙烯酸共聚物获得的涂层具有优异的耐磨性,耐化学性,柔韧性,强度等。

    Portable Information Terminal Device And Display Terminal Device
    8.
    发明申请
    Portable Information Terminal Device And Display Terminal Device 审中-公开
    便携式信息终端设备和显示终端设备

    公开(公告)号:US20080272995A1

    公开(公告)日:2008-11-06

    申请号:US11910135

    申请日:2006-03-28

    IPC分类号: G09G3/36

    摘要: [Summary][Object] It is an object of the present invention to provide a portable information terminal device and a display device capable of effectively suppressing a display screen from being peeped from an oblique direction.[Means for Settlement] A first pattern area and a second pattern area are formed in a display area of a display device 5; in a wide viewing field mode, the whole of the display area is brought into a wide viewing angle state; and in a narrow viewing field mode, a first divided state in which the display area except the first pattern area is brought into a narrow viewing angle state, and a second divided state in which the display area except the second pattern area is brought into the narrow viewing angle state are dynamically switched. For this reason, if the display area in the narrow viewing field mode is peeped from the oblique direction, a high contrast moving pattern arising from the difference in viewing angle is viewed, and thereby the conscious of the peeper can be attracted to the pattern. Accordingly, even if a screen display is visible with a low contrast, it can be prevented from being easily made out.

    摘要翻译: 发明内容本发明的目的是提供一种能够有效地抑制显示屏从倾斜方向窥视的便携式信息终端装置和显示装置。 [结算手段]在显示装置5的显示区域中形成第一图案区域和第二图案区域; 在宽视野模式下,整个显示区域进入宽视角状态; 并且在窄视场模式中,将第一图案区域之外的显示区域变为窄视角状态的第一分割状态和将第二图案区域除外的显示区域进入第二分割状态 动态切换窄视角状态。 因此,如果从倾斜方向窥视窄视场模式的显示区域,则可以观察到由视野差异引起的高对比度运动图案,从而可以将窥视者的意识吸引到图案上。 因此,即使以低对比度可见的屏幕显示,也可以防止容易地形成。