公开(公告)号：US5756402A

公开(公告)日：1998-05-26

申请号：US426693

申请日：1995-04-24

申请人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

发明人： Sadayuki Jimbo ,  Tokuhisa Ohiwa ,  Haruki Mori ,  Akira Kobayashi ,  Tadashi Shinmura ,  Yasuyuki Taniguchi

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： A method for etching a silicon nitride film, includes the steps of supplying a fluorine radical, a compound of fluorine and hydrogen, and an oxygen radical close to a substrate having the silicon nitride film, and selectively etching the silicon nitride film from the substrate with the fluorine radical, the compound of fluorine and hydrogen, and the oxygen radical. A method for etching a silicon nitride film, includes the steps of exciting gas containing fluorine and oxygen gas, thereby generating a fluorine radical and an oxygen radical, supplying the fluorine radical and the oxygen radical close to a substrate having the silicon nitride film and supplying gas of a compound containing a hydroxyl close to the substrate, reacting the fluorine radical, the oxygen radical and the compound containing the hydroxyl, thereby generating a compound of the fluorine radical, the oxygen radical and a compound of fluorine and hydrogen, and selectively etching the silicon nitride film from the substrate with the compound of the fluorine radical, the oxygen radical and the compound of fluorine and hydrogen.

摘要翻译： 一种用于蚀刻氮化硅膜的方法包括以下步骤：在具有氮化硅膜的衬底附近提供氟基，氟和氢的化合物和氧自由基，并从衬底中选择性地蚀刻氮化硅膜， 氟自由基，氟和氢的化合物和氧自由基。 一种用于蚀刻氮化硅膜的方法包括以下步骤：激发含氟和氧气的气体，从而产生氟基和氧自由基，将氟自由基和氧自由基靠近具有氮化硅膜的基板并供应 含有靠近底物的羟基化合物的气体，使氟自由基，氧自由基和含有羟基的化合物反应，从而产生氟自由基，氧自由基和氟和氢的化合物的化合物，并选择性地蚀刻 来自衬底的氮化硅膜与氟自由基，氧自由基以及氟和氢的化合物组成。

公开(公告)号：US08211783B2

公开(公告)日：2012-07-03

申请号：US12966458

申请日：2010-12-13

申请人： Noriko Sakurai ,  Katsunori Yahashi ,  Tokuhisa Ohiwa

发明人： Noriko Sakurai ,  Katsunori Yahashi ,  Tokuhisa Ohiwa

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法可以包括在基底部件上交替地叠加绝缘层和导电层。 绝缘层包括氧化硅。 导电层包括硅。 此外，该方法可以在绝缘层和导电层的层叠体上形成SiOC膜，对SiOC膜进行图案化，并且通过使用图案化的SiOC膜蚀刻绝缘层和导电层而在层叠体中形成孔 作为面具。

公开(公告)号：US20120009786A1

公开(公告)日：2012-01-12

申请号：US13178759

申请日：2011-07-08

申请人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

发明人： Shigeru TAHARA ,  Eiichi Nishimura ,  Fumiko Yamashita ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

IPC分类号： H01L21/3065

CPC分类号： H01L21/02071

摘要： A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

摘要翻译： 进行对形成在基板上的金属层进行等离子体蚀刻的等离子体处理方法，以形成具有层叠结构的金属层的图案，然后形成含有形成金属层并沉积在侧壁上的金属的沉积物 该方法包括：通过在金属层的侧壁部分上形成金属的氧化物或氯化物形成保护层; 通过施加含有氟原子的气体的等离子体来除去沉积物; 并通过在形成保护层之后施加包含氢的等离子体并除去沉积物来还原金属的氧化物或氯化物。

公开(公告)号：US5094879A

公开(公告)日：1992-03-10

申请号：US544595

申请日：1990-06-27

申请人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

发明人： Tetsuo Matsuda ,  Haruo Okano ,  Tokuhisa Ohiwa

IPC分类号： C23C16/50 ,  C23C14/22 ,  C23C16/452 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31

CPC分类号： H01J37/32422 ,  C23C14/221 ,  C23C16/452 ,  H01J37/32357

摘要： According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

摘要翻译： 根据薄膜形成方法，至少一种类型的气体被激活以产生具有正或负电荷的多种物质。 多个物种通过电场或磁场提取特定物种。 特定的物质被提供给基底表面。 此后，特定物质彼此化学反应以形成薄膜。 使用对应于通过电场的物质的质量与电荷的比率的轨迹差进行该提取。

公开(公告)号：US20120021605A1

公开(公告)日：2012-01-26

申请号：US13013380

申请日：2011-01-25

申请人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

发明人： Mitsuhiro OMURA ,  Yumi Ohno ,  Takaya Matsushita ,  Tokuhisa Ohiwa

IPC分类号： H01L21/475 ,  H01L21/4757

CPC分类号： H01L21/31116 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139

摘要： In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

摘要翻译： 在根据一个实施例的半导体器件制造方法中，在半导体衬底上形成含有硅的绝缘膜，在绝缘膜上沉积抗蚀剂，将抗蚀剂图案化成预定图案，并且通过干燥 蚀刻处理，其中使用含有C，F，Br，H和O的气体，其中具有预定图案的抗蚀剂作为掩模。 在抗蚀剂上制造其中C和Br连接的沉积膜。

公开(公告)号：US20110291178A1

公开(公告)日：2011-12-01

申请号：US13041532

申请日：2011-03-07

申请人： Toshiyuki SASAKI ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

发明人： Toshiyuki SASAKI ,  Noriko Sakurai ,  Tokuhisa Ohiwa ,  Katsunori Yahashi

IPC分类号： H01L21/336 ,  H01L29/792

CPC分类号： H01L29/7926 ,  H01L21/84 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/1203 ,  H01L29/66833

摘要： According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

摘要翻译： 根据一个实施例，半导体器件包括衬底，下栅极层，层叠体，虚设电极层，绝缘膜和沟道体。 下栅极层设置在衬底上。 堆叠体包括多个绝缘层和交替堆叠在下栅极层上的多个电极层。 虚设电极层设置在下电极层和层叠体之间，由与电极层相同的材料制成，并且比每个电极层厚。 绝缘膜包括设置在贯穿层叠体形成的孔的侧壁上的电荷存储膜和虚拟电极层。 通道体设置在孔中的绝缘膜的内侧。

公开(公告)号：US07767582B2

公开(公告)日：2010-08-03

申请号：US11525179

申请日：2006-09-22

申请人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

发明人： Nobuyasu Nishiyama ,  Kazuhiro Tomioka ,  Tokuhisa Ohiwa

IPC分类号： H01L21/311

CPC分类号： H01L21/32136 ,  H01L21/311 ,  H01L21/32139 ,  H01L28/55 ,  H01L28/65 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

摘要翻译： 一种制造半导体器件的方法，包括在蚀刻靶膜上形成牺牲膜，在牺牲膜上形成蚀刻掩模，使用蚀刻掩模作为掩模蚀刻蚀刻目标膜，除去牺牲膜以允许蚀刻掩模 粘附到蚀刻目标膜上，并除去蚀刻掩模。

公开(公告)号：US07595885B2

公开(公告)日：2009-09-29

申请号：US12010938

申请日：2008-01-31

申请人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

发明人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

IPC分类号： G01N21/55

CPC分类号： H01L21/76802 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/22 ,  H01J37/32935 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

摘要翻译： 过程监控系统具有被配置为保持要处理的对象的处理室，被配置为向对象发光的照明源，被配置为使光偏振的偏振器，具有双折射材料并设置在处理室上的监视器窗 传播光，方向调整装置，被配置为调节光的偏振面与监视窗的光轴的方向之间的关系;以及监视信息处理器，被配置为检测从物体反射的光。

公开(公告)号：US07327455B2

公开(公告)日：2008-02-05

申请号：US10969860

申请日：2004-10-22

申请人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

发明人： Takayuki Sakai ,  Masanobu Kibe ,  Tokuhisa Ohiwa

IPC分类号： G01J4/00

CPC分类号： H01L21/76802 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/22 ,  H01J37/32935 ,  H01J37/32972 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

公开(公告)号：US06846750B1

公开(公告)日：2005-01-25

申请号：US09604724

申请日：2000-06-28

申请人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

发明人： Tokuhisa Ohiwa ,  Shoji Seta ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akihiro Kojima ,  Junko Ohuchi ,  Tsukasa Azuma ,  Hideo Ichinose ,  Ichiro Mizushima

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/30 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/461

CPC分类号： H01L21/76802 ,  H01L21/0331 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/76816 ,  H01L21/7682

摘要： According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，其中使用可溶于溶解液的可溶性薄膜。 根据本发明的方法，当在要被图案化的被处理膜和掩模图案之间形成可溶性薄膜时，可以通过剥离来去除掩模图案。 另一方面，当薄膜用于形成空气布线结构的虚拟层时，可以去除虚拟层而不用氧等离子体进行灰化。