发明授权
US5763937A Device reliability of MOS devices using silicon rich plasma oxide films
失效
使用富硅等离子体氧化膜的MOS器件的器件可靠性
- 专利标题: Device reliability of MOS devices using silicon rich plasma oxide films
- 专利标题(中): 使用富硅等离子体氧化膜的MOS器件的器件可靠性
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申请号: US277090申请日: 1994-07-19
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公开(公告)号: US5763937A公开(公告)日: 1998-06-09
- 发明人: Vivek Jain , Dipankar Pramanik , Subhash R. Nariani , Kuang-Yeh Chang
- 申请人: Vivek Jain , Dipankar Pramanik , Subhash R. Nariani , Kuang-Yeh Chang
- 申请人地址: CA San Jose
- 专利权人: VLSI Technology, Inc.
- 当前专利权人: VLSI Technology, Inc.
- 当前专利权人地址: CA San Jose
- 主分类号: H01L21/283
- IPC分类号: H01L21/283 ; H01L21/314 ; H01L21/316 ; H01L21/336 ; H01L21/768 ; H01L23/29 ; H01L23/522 ; H01L23/532 ; H01L27/115 ; H01L29/78 ; H01L23/58
摘要:
The invention relates to MOS devices and methods for fabricating MOS devices having multilayer metallization. In accordance with preferred embodiments, internal passivation is used for suppressing device degradation from internal sources. Preferred devices and methods for fabricating such devices include formation of one or more oxide layers which are enriched with silicon to provide such an internal passivation and improve hot carrier lifetime. Preferred methods for fabricating MOS devices having multi-level metallization include modifying the composition of a PECVD oxide film and, in some embodiments, the location and thickness of such an oxide. In an exemplary preferred embodiment, PECVD oxide layers are modified by changing a composition to a silicon enriched oxide.
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