发明授权
US5766992A Process for integrating a MOSFET device, using silicon nitride spacers
and a self-aligned contact structure, with a capacitor structure
失效
用于使用氮化硅间隔物和自对准接触结构的MOSFET器件与电容器结构集成的工艺
- 专利标题： Process for integrating a MOSFET device, using silicon nitride spacers and a self-aligned contact structure, with a capacitor structure
- 专利标题（中）： 用于使用氮化硅间隔物和自对准接触结构的MOSFET器件与电容器结构集成的工艺
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申请号： US827814申请日： 1997-04-11
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公开(公告)号： US5766992A公开(公告)日： 1998-06-16
- 发明人: Chen Cheng Chou , Jenn Tsao
- 申请人： Chen Cheng Chou , Jenn Tsao
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L27/06 ; H01L21/8242
摘要：
A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole.
公开/授权文献
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