- 专利标题： Process for forming silicon dioxide film
-
申请号： US886018申请日： 1997-06-30
-
公开(公告)号： US5770260A公开(公告)日： 1998-06-23
- 发明人: Shun-ichi Fukuyama , Daitei Shin , Yuki Komatsu , Hideki Harada , Yoshihiro Nakata , Michiko Kobayashi , Yoshiyuki Okura
- 申请人： Shun-ichi Fukuyama , Daitei Shin , Yuki Komatsu , Hideki Harada , Yoshihiro Nakata , Michiko Kobayashi , Yoshiyuki Okura
- 申请人地址： JPX Kawasaki JPX Kagoshima
- 专利权人： Fujitsu Limited,Kyushu Fujitsu Electronics Limited
- 当前专利权人： Fujitsu Limited,Kyushu Fujitsu Electronics Limited
- 当前专利权人地址： JPX Kawasaki JPX Kagoshima
- 优先权： JPX5-188156 19930729
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; C23C18/12 ; G02F1/1333 ; H01L21/312 ; H01L21/768 ; H01L51/00 ; H01L51/05 ; B05D3/02 ; B05D3/06
摘要：
A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.
公开/授权文献
- USD349614S Bed 公开/授权日：1994-08-16
信息查询
IPC分类:
