A semiconductor memory device which includes a word line, a bit line and a storage capacitor having first and second ends. A pair of FEATS each having gates coupled to the word line and one side coupled to the bit line. The other side of each FEAT is coupled to a storage capacitor upon which a selected one of four potential levels, corresponding to stored values of zero, one, two, or three, can be stored and thereafter read. One of the FEATS has a thicker gate oxide than the other and thus a higher threshold voltage. Voltage stored on the capacitor is read in two cycles thereby producing in the first cycle a high level pulse, a low level pulse, or no pulse and in the second cycle, a low level pulse or no pulse, depending upon the level of charge stored on the capacitor.