发明授权
US5780900A Thin film silicon-on-insulator transistor having an improved power
dissipation, a high break down voltage, and a low on resistance
失效
具有改善的功率耗散，高分解电压和低导通电阻的薄膜绝缘体上硅晶体管
- 专利标题： Thin film silicon-on-insulator transistor having an improved power dissipation, a high break down voltage, and a low on resistance
- 专利标题（中）： 具有改善的功率耗散，高分解电压和低导通电阻的薄膜绝缘体上硅晶体管
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申请号： US733164申请日： 1996-10-17
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公开(公告)号： US5780900A公开(公告)日： 1998-07-14
- 发明人: Yuji Suzuki , Hitomichi Takano , Masahiko Suzumura , Yoshiki Hayasaki , Takashi Kishida , Yoshifumi Shirai
- 申请人： Yuji Suzuki , Hitomichi Takano , Masahiko Suzumura , Yoshiki Hayasaki , Takashi Kishida , Yoshifumi Shirai
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Works, Inc.
- 当前专利权人： Matsushita Electric Works, Inc.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX8-012172 19960126; JPX8-012173 19960126
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/08 ; H01L29/78 ; H01L29/786 ; H01L29/10
摘要：
A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships: 0.4 .mu.m
公开/授权文献
- US4216497A Apparatus for monitoring a multichannel receiver 公开/授权日：1980-08-05
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