发明授权
US5783494A Selective dry etching method of undoped and doped silicon thin films
失效
未掺杂和掺杂硅薄膜的选择性干蚀刻方法
- 专利标题： Selective dry etching method of undoped and doped silicon thin films
- 专利标题（中）： 未掺杂和掺杂硅薄膜的选择性干蚀刻方法
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申请号： US524886申请日： 1995-09-07
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公开(公告)号： US5783494A公开(公告)日： 1998-07-21
- 发明人: Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
- 申请人： Takehisa Sakurai , Hitoshi Ujimasa , Katsuhiro Kawai , Atsushi Ban , Masaru Kajitani , Mikio Katayama
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-321023 19921130
- 主分类号： G02F1/13
- IPC分类号： G02F1/13 ; G02F1/136 ; G02F1/1368 ; H01L21/302 ; H01L21/3065 ; H01L21/3213 ; H01L21/336 ; H01L29/78 ; H01L29/786
摘要：
In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.
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