利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

103 条记录 (耗时 0.032 秒)

    Method of manufacturing active matrix substrate
    3.
    发明授权
    Method of manufacturing active matrix substrate 失效
    有源矩阵基板的制造方法

    公开(公告)号：US5821133A

    公开(公告)日：1998-10-13

    申请号：US576036

    申请日：1995-12-21

    申请人： Katsuhiro Kawai ,  Mikio Katayama ,  Satoshi Yabuta ,  Masaru Kajitani

    发明人： Katsuhiro Kawai ,  Mikio Katayama ,  Satoshi Yabuta ,  Masaru Kajitani

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/45 ,  H01L21/786

    CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/458

    摘要： A simplified method of manufacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.

    摘要翻译： 公开了制造有源矩阵衬底的简化方法。 在绝缘基板上形成栅极线，栅电极，栅极绝缘膜，蚀刻停止层，半导体层和接触层。 在基板上依次形成像素电极材料膜，第二导电膜和第二绝缘膜。 同时对第二绝缘膜和第二导电膜进行构图，从而从第二导电膜形成源极线，源电极和漏电极以及来自第二绝缘膜的保护膜。 然后，对像素电极材料膜进行图案化，从而在由栅极线和源极线限定的多个区域中形成像素电极。