发明授权
- 专利标题： Semiconductor module having high insulating power and high thermal conductivity
- 专利标题（中）： 具有高绝缘功率和高导热性的半导体模块
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申请号： US8734申请日： 1993-01-25
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公开(公告)号： US5786633A公开(公告)日： 1998-07-28
- 发明人: Eckhard Wolfgang , Reinhold Kuhnert
- 申请人： Eckhard Wolfgang , Reinhold Kuhnert
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX4201794.7 19920123
- 主分类号： H01L23/373
- IPC分类号： H01L23/373 ; H01L23/492 ; H01L23/36
摘要：
A semiconductor module having a high dissipated power has an electrically insulating and thermally conducting layer of crystalline carbon provided between a semiconductor chip and a heat elimination element, whereby the semiconductor chip, the insulating layer and the heat elimination element are connected via an intermediate layer and via connecting layers of silver by pressure sintering. For low-voltage applications, a layer of amorphous carbon can alternatively be employed instead of the layer of crystalline carbon. Extremely low heat transmission resistance between the semiconductor chip and the heat elimination element is provided.
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