发明授权
US5789268A Method of forming a electrode structure for ferroelectric capacitors for
integrated circuits
失效
形成用于集成电路的铁电电容器的电极结构的方法
- 专利标题: Method of forming a electrode structure for ferroelectric capacitors for integrated circuits
- 专利标题(中): 形成用于集成电路的铁电电容器的电极结构的方法
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申请号: US728373申请日: 1996-10-10
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公开(公告)号: US5789268A公开(公告)日: 1998-08-04
- 发明人: Vasanta Chivukula , Pak K. Leung
- 申请人: Vasanta Chivukula , Pak K. Leung
- 申请人地址: CAX Montreal
- 专利权人: Northern Telecom Limited
- 当前专利权人: Northern Telecom Limited
- 当前专利权人地址: CAX Montreal
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/70 ; H01L27/00
摘要:
An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as PZT is formed comprising a first layer of a noble metal, a second layer of another metal and a thicker layer of the noble metal, which are annealed to cause controlled interdiffusion of the layers forming a mixed metal surface layer having a rough interface with the dielectric layer. For example, the first two layers comprise relatively thin .about.200 .ANG. layers of Pt and Ti, and then a thicker layer of the main, first, electrode material is deposited on top. Non-uniform interdiffusion of the layers during annealing causes intermixing of the Pt and Ti layers at the interfaces forming a Pt/Ti alloy having a rough surface. The rough surface, and particularly hillocks formed at the interface, penetrate into the ferroelectric films, and anchor the electrode material to the dielectric. Improved adhesion of the conductive electrode material improves integrity of this interface during subsequent processing.
公开/授权文献
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