公开(公告)号：US5789268A

公开(公告)日：1998-08-04

申请号：US728373

申请日：1996-10-10

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01L21/02 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as PZT is formed comprising a first layer of a noble metal, a second layer of another metal and a thicker layer of the noble metal, which are annealed to cause controlled interdiffusion of the layers forming a mixed metal surface layer having a rough interface with the dielectric layer. For example, the first two layers comprise relatively thin .about.200 .ANG. layers of Pt and Ti, and then a thicker layer of the main, first, electrode material is deposited on top. Non-uniform interdiffusion of the layers during annealing causes intermixing of the Pt and Ti layers at the interfaces forming a Pt/Ti alloy having a rough surface. The rough surface, and particularly hillocks formed at the interface, penetrate into the ferroelectric films, and anchor the electrode material to the dielectric. Improved adhesion of the conductive electrode material improves integrity of this interface during subsequent processing.

摘要翻译： 提供了与铁电电容器电介质相容的改进的电极结构。 特别地，形成了具有对诸如PZT之类的铁电材料的附着力提高的多层电极，其包含贵金属的第一层，另一金属的第二层和贵金属的较厚层，其被退火以引起控制的相互扩散 形成与介电层具有粗糙界面的混合金属表面层的层。 例如，前两层包括相对较薄的Pt和Ti的差的200Gn层，然后将主要的第一电极材料的较厚层沉积在顶部。 在退火过程中层的不均匀相互扩散导致在形成具有粗糙表面的Pt / Ti合金的界面处Pt和Ti层之间的混合。 粗糙表面，特别是在界面处形成的小丘，渗透到铁电体膜中，并将电极材料锚固到电介质上。 改进的导电电极材料的附着力在随后的处理过程中改善了该界面的完整性。

公开(公告)号：US5886867A

公开(公告)日：1999-03-23

申请号：US814627

申请日：1997-03-10

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01L21/02 ,  H01L27/115 ,  H01G4/06 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A ferroelectric dielectric for microwave applications is provided including a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapour, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material including lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

摘要翻译： 提供了用于微波应用的铁电电介质，其包括锆钛酸铅电介质材料的多晶钙钛矿相。 通过快速热退火工艺，通过低温工艺提供小晶粒尺寸的材料。 在水蒸气存在下，优选加入少量臭氧，并在低于500℃的温度下，在含氧气氛中沉积并退火一层非晶铁电前体材料。有利地，该方法提供 用于形成具有低于20nm的粒度小于20nm的锆钛酸铅的铁电体材料，具有低膜应力，高介电常数和低漏电流，其具有优异的高达10GHz的铁电特性。 该材料适用于电容器，滤波器，去耦，耦合和旁路元件以及高频表面声波器件。

公开(公告)号：US5753945A

公开(公告)日：1998-05-19

申请号：US595116

申请日：1996-02-01

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01L21/02 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L28/56 ,  H01L28/60 ,  H01L29/516

摘要： An integrated circuit structure including dielectric barrier layer compatible with perovskite ferroelectric materials and comprising zirconium titanium oxide, ZrTiO.sub.4, and a method of formation of the dielectric barrier layer by sol gel process is described. The amorphous, mixed oxide barrier layer has excellent dielectric properties up to GHz frequencies, and crystallizes above 800.degree. C., facilitating device processing. In particular, the barrier layer is compatible with lead containing perovskites, including PZT and PLZT ferroelectric dielectrics for example for application in non-volatile memory cells, and high value capacitors for integrated circuits, using silicon or GaAs integrated circuit technologies.

摘要翻译： 描述了包括与钙钛矿铁电材料兼容并且包含锆钛氧化物，ZrTiO 4的电介质阻挡层的集成电路结构，以及通过溶胶凝胶法形成介电阻挡层的方法。 无定形混合氧化物阻挡层具有高达GHz频率的优良介电特性，并在800℃以上结晶，便于器件加工。 特别地，阻挡层与使用硅或GaAs集成电路技术的含铅钙钛矿相容，包括例如用于非易失性存储单元的PZT和PLZT铁电介质以及用于集成电路的高价值电容器。

公开(公告)号：US06146905A

公开(公告)日：2000-11-14

申请号：US334655

申请日：1999-06-17

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01G7/06

CPC分类号： H01G7/06 ,  C04B35/491 ,  C04B2235/658 ,  C04B2235/6588 ,  C04B2235/663 ,  C04B2235/768

摘要： A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

摘要翻译： 提供了用于微波应用的铁电电介质，其包括钛酸铅锆酸盐电介质材料的多晶钙钛矿相。 通过快速热退火工艺，通过低温工艺提供小晶粒尺寸的材料。 在水蒸气存在下，优选加入少量臭氧，并在低于500℃的温度下，在含氧气氛中沉积并退火一层非晶铁电前体材料。有利地，该方法提供 用于形成具有低于20nm的粒径小于20nm的锆钛酸铅的铁电材料，具有低至10GHz的优异的铁电特性，具有低膜应力，高介电常数和低漏电流。 该材料适用于电容器，滤波器，去耦，耦合和旁路元件以及高频表面声波器件。

公开(公告)号：US06077715A

公开(公告)日：2000-06-20

申请号：US764367

申请日：1996-12-12

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01L21/02 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapour, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

摘要翻译： 提供了用于微波应用的铁电电介质，其包括钛酸铅锆酸盐电介质材料的多晶钙钛矿相。 通过快速热退火工艺，通过低温工艺提供小晶粒尺寸的材料。 在水蒸气存在下，优选加入少量臭氧，并在低于500℃的温度下，在含氧气氛中沉积并退火一层非晶铁电前体材料。有利地，该方法提供 用于形成具有低于20nm的粒径小于20nm的锆钛酸铅的铁电材料，具有低至10GHz的优异的铁电特性，具有低膜应力，高介电常数和低漏电流。 该材料适用于电容器，滤波器，去耦，耦合和旁路元件以及高频表面声波器件。

公开(公告)号：US5612560A

公开(公告)日：1997-03-18

申请号：US551264

申请日：1995-10-31

申请人： Vasanta Chivukula ,  Pak K. Leung

发明人： Vasanta Chivukula ,  Pak K. Leung

IPC分类号： H01L21/02 ,  H01L27/108

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： An improved electrode structure compatible with ferroelectric capacitor dielectrics is provided. In particular, a multilayer electrode having improved adhesion to ferroelectric materials such as PZT is formed comprising a first layer of a noble metal, a second layer of another metal and a thicker layer of the noble metal, which are annealed to cause controlled interdiffusion of the layers forming a mixed metal surface layer having a rough interface with the dielectric layer. For example, the first two layers comprise relatively thin .about.200.ANG. layers of Pt and Ti, and then a thicker layer of the main, first, electrode material is deposited on top. Non- uniform interdiffusion of the layers during annealing causes intermixing of the Pt and Ti layers at the interfaces forming a Pt/Ti alloy having a rough surface. The rough surface, and particularly hillocks formed at the interface, penetrate into the ferroelectric films, and anchor the electrode material to the dielectric. Improved adhesion of the conductive electrode material improves integrity of this interface during subsequent processing.

摘要翻译： 提供了与铁电电容器电介质相容的改进的电极结构。 特别地，形成了具有对诸如PZT之类的铁电材料的附着力提高的多层电极，其包含贵金属的第一层，另一金属的第二层和贵金属的较厚层，其被退火以引起控制的相互扩散 形成与介电层具有粗糙界面的混合金属表面层的层。 例如，前两层包括相对较薄的Pt和Ti的差的200Gn层，然后将主要的第一电极材料的较厚层沉积在顶部。 在退火过程中层的不均匀相互扩散导致在形成具有粗糙表面的Pt / Ti合金的界面处Pt和Ti层之间的混合。 粗糙表面，特别是在界面处形成的小丘，渗透到铁电体膜中，并将电极材料锚固到电介质上。 改进的导电电极材料的附着力在随后的处理过程中改善了该界面的完整性。

公开(公告)号：US20110206007A1

公开(公告)日：2011-08-25

申请号：US13098863

申请日：2011-05-02

申请人： Xixian Chen ,  Weigang Li ,  Vasanta Chivukula ,  Shiva Mirzaei-Rezaei ,  Brian Troup ,  Miroslav Budic ,  Yong Zhou ,  Ryan Santa

发明人： Xixian Chen ,  Weigang Li ,  Vasanta Chivukula ,  Shiva Mirzaei-Rezaei ,  Brian Troup ,  Miroslav Budic ,  Yong Zhou ,  Ryan Santa

IPC分类号： H04W36/18

CPC分类号： H04W36/18 ,  H04W72/042

摘要： A method and system for connection management in a wireless data network, such as a 1×EV-DO network adds connections to new network sectors upon receipt of a connection request from an active terminal, but removes data connections that the active terminal requests to be dropped only after confirmation from the active terminal that a channel allocation message has been received and applied. The active network maintains an active set of connections that is at least as large as the active set maintained by the active terminal and does not initiate a connection termination if no confirmation of the channel allocation message is received. This allows for a reduction in the number of dropped connections.

摘要翻译： 在诸如1×EV-DO网络的无线数据网络中的连接管理的方法和系统在从活动终端接收到连接请求时添加到新网络扇区的连接，但是移除活动终端请求的数据连接 仅在从活动终端确认之后才丢弃已经接收并应用信道分配消息。 活动网络维护至少与由活动终端维护的活动集一样大的连接的活跃集合，并且如果不接收到信道分配消息的确认，则不发起连接终止。 这样可以减少掉线连接的数量。

公开(公告)号：US20060245407A1

公开(公告)日：2006-11-02

申请号：US11412959

申请日：2006-04-28

申请人： Xixian Chen ,  Weigang Li ,  Vasanta Chivukula ,  Shiva Mirzaei-Rezaei ,  Brian Troup ,  Miroslav Budic ,  Yong Zhou ,  Ryan Santa

发明人： Xixian Chen ,  Weigang Li ,  Vasanta Chivukula ,  Shiva Mirzaei-Rezaei ,  Brian Troup ,  Miroslav Budic ,  Yong Zhou ,  Ryan Santa

IPC分类号： H04Q7/24

CPC分类号： H04W36/18 ,  H04W72/042

摘要： A method and system for connection management in a wireless data network, such as a 1xEV-DO network adds connections to new network sectors upon receipt of a connection request from an active terminal, but removes data connections that the active terminal requests to be dropped only after confirmation from the active terminal that a channel allocation message has been received and applied. The active network maintains an active set of connections that is at least as large as the active set maintained by the active terminal and does not initiate a connection termination if no confirmation of the channel allocation message is received. This allows for a reduction in the number of dropped connections.

摘要翻译： 在诸如1xEV-DO网络的无线数据网络中的连接管理的方法和系统在从活动终端接收到连接请求时添加到新网络扇区的连接，但是移除活动终端请求仅丢弃的数据连接 在从活动终端确认已经接收并应用信道分配消息之后。 活动网络维护至少与由活动终端维护的活动集一样大的连接的活跃集合，并且如果不接收到信道分配消息的确认，则不发起连接终止。 这样可以减少掉线连接的数量。

公开(公告)号：US06337032B1

公开(公告)日：2002-01-08

申请号：US09504954

申请日：2000-02-16

申请人： Vasanta Chivukula ,  Michael Sayer ,  David R. McDonald ,  Ismail T. Emesh

发明人： Vasanta Chivukula ,  Michael Sayer ,  David R. McDonald ,  Ismail T. Emesh

IPC分类号： H01L2102

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B35/624 ,  C23C18/1216 ,  C23C18/1254 ,  H01L41/1875 ,  H01L41/318

摘要： A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.

摘要翻译： 提供了一种用于形成钙钛矿铁电材料的溶胶 - 凝胶前体混合物和形成铁电体材料的方法。 前体溶液包含在合适的pH控制的含水溶剂混合物中的至少一种金属的无机盐和其它组成金属的金属有机化合物的混合物的溶胶 - 凝胶制剂，以形成稳定的透明溶胶 - 凝胶混合物。 前体溶液和方法提供用于形成其它铁电电介质和压电材料，特别是含铅材料的薄层，用于包括非易失性DRAM，依赖于非线性光学性质的光电器件和压电器件，并且与 用于双极，CMOS或双极CMOS电路的亚微米器件结构的处理。

公开(公告)号：US08787340B2

公开(公告)日：2014-07-22

申请号：US13364404

申请日：2012-02-02

申请人： Xixian Chen ,  Vasanta Chivukula ,  Weigang Li ,  Guoqiang Xue ,  Ryan Santa ,  Miroslav Budic ,  Brian Troup ,  Martin Kendall

发明人： Xixian Chen ,  Vasanta Chivukula ,  Weigang Li ,  Guoqiang Xue ,  Ryan Santa ,  Miroslav Budic ,  Brian Troup ,  Martin Kendall

IPC分类号： H04W76/02 ,  H04W76/00 ,  H04L1/16 ,  H04W72/04

CPC分类号： H04W76/005 ,  H04L1/16 ,  H04W72/042 ,  H04W76/45

摘要： A method of connection setup in mobile wireless data communications systems is disclosed where the connection setup time is decreased for delay-sensitive communications sessions relative to the normal connection setup time for confidence-dependent communications sessions. This is achieved by performing some of the connection set-up steps for delay-sensitive communications sessions after successfully demodulating a smaller number of indications identifying an access terminal's desired serving resource than would be demodulated in the case of a confidence-dependent communication session prior to performing the same connection set-up steps.

摘要翻译： 公开了一种移动无线数据通信系统中的连接建立方法，其中相对于用于依赖于置信的通信会话的正常连接建立时间，延迟敏感通信会话的连接建立时间减少。 这是通过在成功地解调识别接入终端的期望服务资源的较少数量的指示之后执行用于延迟敏感通信会话的一些连接建立步骤来实现的，而不是在依赖于依赖于通信会话的情况下被解调的 执行相同的连接设置步骤。