发明授权
US5796133A Semiconductor device capacitor having lower electrodes separated by low
dielectric spacer material
失效
半导体器件电容器具有由低介电隔离材料隔开的下电极
- 专利标题： Semiconductor device capacitor having lower electrodes separated by low dielectric spacer material
- 专利标题（中）： 半导体器件电容器具有由低介电隔离材料隔开的下电极
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申请号： US782827申请日： 1997-01-13
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公开(公告)号： US5796133A公开(公告)日： 1998-08-18
- 发明人: Kee-Won Kwon , Chang-Seok Kang
- 申请人： Kee-Won Kwon , Chang-Seok Kang
- 申请人地址： KRX Kyungki-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Kyungki-do
- 优先权： KRX1993963 19930127
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/788 ; H01L29/792
摘要：
In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.
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