发明授权
- 专利标题： Method for semiconductor filming
- 专利标题（中）： 半导体成像方法
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申请号： US571538申请日： 1995-12-13
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公开(公告)号： US5798141A公开(公告)日： 1998-08-25
- 发明人: Toru Harada
- 申请人： Toru Harada
- 申请人地址： JPX Tokyo
- 专利权人： Kokusai Electric Co., Ltd.
- 当前专利权人： Kokusai Electric Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-334400 19941219
- 主分类号： C23C8/28
- IPC分类号： C23C8/28 ; H01L21/31 ; H01L21/316 ; C23C16/00
摘要：
A method of semiconductor filming wherein a thin film is deposited on a wafer under an atmospheric pressure, which comprises the steps of simultaneously supplying a reactive gas and an inert gas to a reaction tube and maintaining a partial pressure of the reactive gas constant by adjusting the flow rates of those gases, whereby stability in film quality is improved.
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